CMBTA92 CDIL | Alldatasheet

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Continental Device India Limited Data Sheet Page 1 of 3 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA92 = 2D CMBTA93 = 2E ABSOLUTE MAXIMUM RATINGS CMBT A92 A93 Collector–base voltage (open emitter) –V CBO max. 300 200 V Collector–emitter voltage (open base) –V CEO max. 300 200 V Emitter–base voltage (open collector) –V EBO max. 5 V Collector current (d.c.) – I C max. 500 mA Total power dissipation up to T amb = 25 °C P tot 250 mW D.C. current gain –IC = 10 mA; –V CE = 10 V h FE min. 40 Transition frequency at f = 100 MHz –IC = 10 mA; –V CE = 20 V f T min. 50 MHz Collector–base capacitance at f = 1 MHz IE = 0; –V CB = 20 V C cb max. 6 8 pF CMBTA92 CMBTA93 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

Continental Device India Limited Data Sheet Page 2 of 3 RATINGS (at T A = 25°C unless otherwise specified) Limiting values CMBT A92 A93 Collector–base voltage (open emitter) –V CBO max. 300 200 V Collector–emitter voltage (open base) –V CEO max. 300 200 V Emitter–base voltage (open collector) –V EBO max. 5 V Collector current (d.c.) – I C max. 500 mA Total power dissipation up to T amb = 25 °C P tot max 250 mW Storage temperature T stg –55 to +150 ° C Junction temperature Tj max. 150 ° C THERMAL CHARACTERISTICS Tj = P (R th j–t + R th t–s + R th s–a) + T amb Thermal resistance from junction to ambient R th j–a 500 K/W CHARACTERISTICS (at T A = 25°C unless otherwise specified) Collector–emitter breakdown voltage –IC = 1 mA; I B = 0 –V (BR)CEO min. 300 200 V Collector–base breakdown voltage –IC = 100 µA; IE = 0 –V(BR)CBO min. 300 200 V Collector cut–off current –VCB = 200 V; I E = 0 –ICBO max. 0.25 – µA –VCB = 160 V; I E = 0 –ICBO max. – 0.25 µA Emitter–base breakdown voltage –IE = 100 µA; IC = 0 –V(BR)EBO min. 5 V Emitter cut–off current IC = 0; –V BE = 3 V; –I EBO max. 0.1 0.1 mA Collector–base capacitance at f= 1 MHz IE = 0; –V CB = 20 V C cb max. 6 8 pF Saturation voltages –IC = 20 mA; –I B = 2 mA –V CEsat max. 0.5 0.5 V –IC = 20 mA; –I B = 2 mA –V BEsat max. 0.9 0.9 V D.C. current gain –IC = 1 mA; –V CE = 10 V h FE min. 25 –IC = 10 mA; –V CE = 10 V h FE min. 40 –IC = 30 mA; –V CE = 10 V h FE min. 25 CMBTA92 CMBTA93

Continental Device India Limited Data Sheet Page 3 of 3 Customer Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax +q 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com