CMBTA42 CDIL | Alldatasheet

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Continental Device India Limited Data Sheet Page 1 of 3 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBTA42 = 1D CMBTA43 = 1E ABSOLUTE MAXIMUM RATINGS CMBT A42 A43 Collector–base voltage (open emitter) V CBO max. 300 200 V Collector–emitter voltage (open base) V CEO max. 300 200 V Emitter–base voltage (open collector) V EBO max. 6 V Collector current (d.c.) I C max. 500 mA Total power dissipation up to T amb = 25 °C P tot max. 250 mW Junction temperature T j max. 150 ° C D.C. current gain IC = 10 mA; V CE = 10 V h FE min. 40 Transition frequency at f = 35 MHz IC = 10 mA; V CE = 20 V f T min. 50 MHz Feedback capacitance at f = 1 MHz IC = 0; V CE = 20 V C re max. 3 4 pF CMBTA42 CMBTA43 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company

Continental Device India Limited Data Sheet Page 2 of 3 RATINGS (at T A = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) V CBO max. 300 200 V Collector–emitter voltage (open base) V CEO max. 300 200 V Emitter–base voltage (open collector) V EBO max. 6 V Collector current (d.c.) I C max. 500 mA Total power dissipation up to T amb = 25 °C P tot max. 250 mW Storage temperature T stg –55 to +150 ° C Junction temperature T j max. 150 ° C THERMAL CHARACTERISTICS Tj = P (R th j–t + R th t–s + R th s–a) + T amb Thermal resistance from junction to ambient R th j–a = 500 K/W CHARACTERISTICS (at T A = 25°C unless otherwise specified) Collector–emitter breakdown voltage CMBTA42 A43 IC = 1 mA; I B = 0 V (BR)CEO min. 300 200 V Collector–base breakdown voltage IC = 100 µA; IE = 0 V(BR)CBO min. 300 200 V Emitter–base breakdown voltage IE = 100 µ A; IC = 0 V(BR)EBO min. 6 V Collector cut–off current IE = 0; V CB = 200 V ICBO max. 0.1 – µA IE = 0; V CB = 160 V ICBO max. – 0.1 µA Emitter cut–off current IC = 0; V BE = 6 V IEBO max. 0.1 – µA IC = 0; V BE = 4 V IEBO max. – 0.1 µA Feedback capacitance at f = 1 MHz IE = 0; V CB = 20 V C re max. 3 4 pF Saturation voltages IC = 20 mA; I B = 2 mA V CEsat max. 0.5 V IC = 20 mA; I B = 2 mA V BEsat max. 0.9 V D.C. current gain IC = 1 mA; V CE = 10 V h FE min. 25 IC = 10 mA; V CE = 10 V h FE min. 40 IC = 30 mA; V CE = 10 V h FE min. 40 Transition frequency at f = 35 MHz IC = 10 mA; V CE = 20 V f T min. 50 MHz CMBTA42 CMBTA43

Continental Device India Limited Data Sheet Page 3 of 3 Customer Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com