CMBTA05 CDIL | Alldatasheet

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Continental Device India Limited Data Sheet Page 1 of 3 CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transistor Marking CMBTA05 = 1H CMBTA06 = 1G ABSOLUTE MAXIMUM RATINGS CMBT A05 A06 Collector–base voltage (open emitter) V CBO max. 60 80 V Collector–emitter voltage (open base) V CEO max. 60 80 V Emitter–base voltage (open collector) V EBO max. 4 V Collector current (d.c.) I C max. 500 mA Total power dissipation up to T amb = 25 °C P tot max. 250 mW D.C. current gain IC = 100 mA; V CE = 1 V h FE min. 100 Transition frequency at f = 100 MHz IC = 10 mA; V CE = 2 V f T min. 100 MHz Collector–emitter saturation voltage IC = 100 mA; I B = 10 mA V CEsat max. 0.25 V PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

Continental Device India Limited Data Sheet Page 2 of 3 RATINGS (at T A = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) V CBO max. 60 80 V Collector–emitter voltage (open base) V CEO max. 60 80 V Emitter–base voltage (open collector) V EBO max. 4 V Collector current (d.c.) I C max. 500 mA Total power dissipation up to T amb = 25 °C P tot max. 250 mW Storage temperature T stg max. –55 to +150 ° C Junction temperature Tj max. 150 ° C THERMAL CHARACTERISTICS Tj = P (R th j–t + R th t–s + R th s–a) + T amb Thermal resistance from junction to ambient R th j–a = 500 K/W CHARACTERISTICS (at T A = 25°C unless otherwise specified) CMBT A05 A06 Collector–emitter breakdown voltage IC = 1 mA; I B = 0 V (BR)CEO min. 60 80 V Emitter–base breakdown voltage IC = 0; I E = 100 µ AV (BR)EBO min. 4 V Collector cut–off current VCE = 60 V; I B = 0 ICEO max. 0.1 µA VCB = 60 V; I E = 0 ICBO max. 0.1 µA VCB = 80 V; I E = 0 ICBO max. 0.1 µA Saturation voltages IC = 100 mA; I B = 10 mA V CEsat max. 0.25 V Base–emitter on voltage IC = 100 mA; V CE = 1 V V BE(on) max. 1.2 V D.C. current gain IC = 10 mA; V CE = 1 V h FE min. 100 IC = 100 mA; V CE = 1 V h FE min. 100 Transition frequency at f = 100 MHz IC = 10 mA; V CE = 2 V f T min. 100 MHz CMBTA05 CMBTA06

Continental Device India Limited Data Sheet Page 3 of 3 Customer Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com