CMBT5550 CDIL | Alldatasheet

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Continental Device India Limited Data Sheet Page 1 of 3 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5550 = 1F ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) V CBO max. 160 V Collector–emitter voltage (open base) V CEO max. 140 V Collector current I C max. 600 mA Total power dissipation up to T amb = 25°C P tot max 250 mW Collector–emitter saturation voltage IC = 50 mA; I B = 5 mA V CEsat max. 0.25 V D.C. current gain IC = 10 mA; V CE = 5 V h FE 60 to 250 RATINGS (at T A = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) V CBO max. 160 V Collector–emitter voltage (open base) V CEO max. 140 V Emitter–base voltage (open collector) V EBO max. 6 V Collector current I C max. 600 mA CMBT5550 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

Continental Device India Limited Data Sheet Page 2 of 3 Total power dissipation up to T amb = 25°C P tot max 250 mW Storage temperature T stg –55 to +150 ° C Junction temperature T j max. 150 ° C THERMAL RESISTANCE from junction to ambient R th j–a 500 K/W CHARACTERISTICS (at T A = 25°C unless otherwise specified) Collector cut–off current IE = 0; V CB = 100 V I CBO max. 100 nA IE = 0; V CB = 100 V; T amb = 100 °C I CBO max. 100 mA Emitter cut–off current IC = 0; V EB = 4.0 V I EBO max. 50 nA Breakdown voltages IC = 1 mA; I B = 0 V (BR)CEO min. 140 V IC = 10 µ A; IE = 0 V(BR)CBO min. 160 V IC = 0; I E = 10 µ AV (BR)EBO min. 6 V Saturation voltages VCEsat max. 0.15 VIC = 10 mA; I B = 1 mA VBEsat max. 1 V VCEsat max. 0.25 VIC = 50 mA; I B = 5 mA VBEsat max. 1.2 V D.C. current gain IC = 1 mA; V CE = 5 V h FE min. 60 min. 60IC = 10 mA; V CE = 5 V h FE max. 250 IC = 50 mA; V CE = 5 V h FE min. 20 Output capacitance at f = 1 MHz IE = 0; V CB = 10 V C o max. 6 pF Input capacitance at f = 1 MHz IC = 0; V EB = 10 V C i max. 30 pF Transition frequency at f = 100 MHz min. 100 MHzIC = 10 mA; V CE = 10 V; T amb = 25 °C f T max. 300 MHz CMBT5550

Continental Device India Limited Data Sheet Page 3 of 3 Customer Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com