CMBT5087 CDIL | Alldatasheet

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Continental Device India Limited Data Sheet Page 1 of 3 SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistor Marking CMBT5087= 2Q ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) V CBO max. 50 V Collector-emitter voltage (open base) V CEO max. 50 V Emitter-base voltage (open collector) V EBO max. 3 V Collector current I C max. 50 mA Total power dissipation at T amb = 25°C P tot* max. 225 mW Junction temperature T j max. 150 ° C D.C. current gain –IC = 100 µA; V CE = 5 V h FE min. 250 max. 800 Transition frequency at f = 20 MHz IC = 500 µA; V CE = 5 V f T min. 40 MHz RATINGS (at T A = 25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) V CBO max. 50 V Collector-emitter voltage (open base) V CEO max. 50 V CMBT5087 *FR-5 Board = 1.0 × 0.75 × 0.062 in. PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

Continental Device India Limited Data Sheet Page 2 of 3 Emitter-base voltage (open collector) V EBO max. 3 V Collector current (d.c.) I C max. 50 mA Total power dissipation at T amb = 25°C P tot* max. 225 mW Storage temperature T stg -55 to +150 ° C Junction temperature T j max. 150 ° C THERMAL RESISTANCE From junction to ambient R th j–a 417 °/W CHARACTERISTICS (at T A = 25°C unless otherwise specified) Collector cut-off current IE = 0; V CB = 10 V I CBO max. 10 nA IE = 0; V CB = 35 V max. 50 nA Breakdown voltages IC = 1 mA; I B = 0 V CEO min. 50 V IC = 100 µA; I E = 0 V CBO min. 50 V Saturation voltage IC = 10 mA; I B = 1.0 mA V CEsat max. 300 mV IC = 10 mA; I B = 1.0 mA V BEsat max. 0.85 V D.C. current gain IC = 100 µA; V CE = 5 V h FE min. 250 max. 800 I C = 1 mA; V CE = 5 V min. 250 IC = 10 mA; V CE = 5 V min. 250 Collector capacitance at f = 100 KHz IE = 0; V CB = 5 V C ob max. 4.0 pF Transition frequency at f = 20 MHz IC = 500 µA; V CE = 5 V f T min. 40 MHz Small signal current IC = 1 mA; VCE = 5 V; f = 1 KHz h fe min. 250 max. 900 Noise figure IC = 20 µA; V CE = 5 V; R S = 10 kΩ NF max. 2.0 dB f = 10 Hz to 15.7 KHz I C = 100 µA; V CE = 5 V; R S = 3.0 kΩ; f = 1.0 KHz NF max. 2.0 dB *FR-5 Board = 1.0 × 0.75 × 0.62 in. CMBT5087

Continental Device India Limited Data Sheet Page 3 of 3 Customer Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com