CMBT2907 RECTRON | Alldatasheet
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Technical content
200 MHz Turn-off switching time toff < 100 ns -ICon = 150 mA; -IBon = IBoff = 15 mA DC Current Gain hFE > 30 fT Transition frequency at f = 100 MHz -IC = 50 mA; -VCE = 20 V -VCE = 10V -IC = 500mA > 50 < 10 nA uA nA < 50 < 50 250 600 IE = 0, -VCB = 50V, Tj=125oC < 20 Open emitter; -IC= 10uA, IE= 0 Emitter-base breakdown voltage > 40 -VCE(Sat) < 1.6 < 2.6 -VEB = 0.5V, -VCE = 30V-ICEX -VEB = 3V, -VCE = 30V-IBEX Saturation Voltages Collector-base breakdown voltage -V(BR)CBO -V(BR)CEO -V(BR)EBO -VBE(Sat) Collector-emitter breakdown voltage mW Storage Temperature Tstg UNITS Collector Base Voltage -VCEO -VCBO V Collector Emitter Voltage 5.0 CMBT2907 CMBT2907A Emitter Base Voltage -VEBO DESCRIPTION SYMBOL 5.0 -55 to +150 150 CONDITIONS K/W oC CMBT2907 CMBT2907A 500 Open collector; -IE= 10uA, IC= 0 Open base; -IC= 10mA, IB= 0 > 60 UNITS Collector Cut Off Current Base Current w/reverse biased emitter junction mA -ICBO IE = 0, -VCB = 50V < 20 < 10 SYMBOL Rth(j-a) Ptot Tj Collector Current -IC
DESCRIPTION
-ICBO Junction to Ambient in free air Power dissipation up to Tamb = 25 oC Thermal Characteristics Junction Temperature -VBE(Sat) < 1.3 -IC = 150mA, -IB = 15mA V -IC = 500mA, -IB = 50mA > 60 > 5.0 -VCE(Sat) < 0.4 PNP Silicon Planar Epitaxial Transistors CMBT2907 Electrical Characteristics (at Ta=25 oC unless otherwise specified) Unit: mm Pin configuration: 1. BASE 2. EMITTER 3. COLLECTOR Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise) www.rectron.com 1 of 2
PNP Silicon Planar Epitaxial Transistors CMBT2907 ns < 100 -VEB = 2V, IC = Ic = 0 < 30 turn off time (ts + tf) fall time toff Input Capacitance at f = 1 MHz Ci Turn-off time when switched from to cut-off with + IBM = 15 mA pF VCC = 30V pF < 30tf VCC = 6V > 75 -VCE = 10V, -IC = 0.1mA Output Capacitance at f = 1 MHz CO -VCB = 10V, IE = Ie = 0 < 8.0 Transition Frequency at f = 100 MHz fT -VCE=20V, -IC=50mA > 200 MHZ > 30 > 100 > 50 > 35 -VCE = 10V, -IC = 10mA > 75 > 100 DC Current Gain h FE -VCE = 10V, -IC = 150mA 100 to 300 -VCE = 10V, -IC = 1mA -VCE = 10V, -IC = 500mA > 50 storage time ts -IC = 150mA, -IB = 15mA, < 80 ns Switching times (between 10% and 90%) -IC = 150mA, -IB = 15mA, Turn-on time when switched to delay time td < 10 rise time tr < 40 turn on time (td + tr) ton < 45 www.rectron.com 2 of 2