CMBT2369 CDIL | Alldatasheet

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Continental Device India Limited Data Sheet Page 1 of 3 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking CMBT2369 = lJ ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) V CB0 max. 40 V Collector–emitter voltage (VBE = 0) V CES max. 40 V Collector–emitter voltage (open base) V CE0 max. 15 V Collector current (d.c. value) I C max. 500 mA Total power dissipation up to T amb = 25 °C P tot max. 250 mW D.C. current gain IC = 10mA; V CE = 1 V h FE 40 to 120 IC = 100 mA; V CE = 2 V h FE >2 0 Storage time ICon = I Bon = I Boff = 10 mA t s <1 3 n s CMBT2369 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

Continental Device India Limited Data Sheet Page 2 of 3 RATINGS (at T A = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) V CB0 max. 40 V Collector–emitter voltage (VBE = 0) V CES max. 40 V Collector–emitter voltage (open base) V CE0 max. 15 V Emitter–base voltage (open collector) V EB0 max. 4,5 V Collector current (d.c. value) I C max. 500 mA Total power dissipation up to T amb = 25 °C P tot max. 250 mW Storage temperature T stg –55 to 150° C Junction temperature T j max. 150 ° C THERMAL RESISTANCE From junction to ambient in free air R th j–a = 500 K/W CHARACTERISTICS (at T A = 25°C unless otherwise specified) Tj = 25 °C unless otherwise specified Collector cut–off current IE = 0; V CB = 20 V I CB0 < 400 nA IE = 0; V CB = 20V; T j = 125°C ICB0 <3 0 µA Saturation voltages IC = 10 mA; l B = 1 mA V CEsat < 0,25 V VBEsat 0,70 to 0,85 V D.C. current gain IC = 10mA; V CE = 1 V h FE 40 to 120 IC = 10mA; V CE = 1 V; T amb = –55°C h FE >2 0 IC = 100 mA; V CE = 2 V h FE >2 0 Output capacitance at f = 1 MHz IE = 0; V CB = 5V Co < 4,0 pF Small–signal current gain IC = 1,0mA; V CE = 10V; f = 100MHz; T amb = 25°C h fe > 5,0 Breakdown voltages IC = 10 mA; l B = 0 V (BR)CEO min. 15 V IC = 10µ A; IE = 0 V(BR)CBO min. 40 V IC = 0; I E = 10µ AV (BR)EBO min. 4,5 V IC = 10µ A; VBE = 0 V(BR)CES min. 40 V Switching times at T amb = 25 °C Storage time typ. 5,0 ns ICon = I Bon = –I Boff = 10 mA ts <1 3 n s Turn–on time t on typ. 8,0 ns IC = 10mA; I Bon = 3mA; V CC = 3V t on <1 2 n s Turn–off time t off typ. 10 ns IC = 10mA; I Bon = 3mA; I Boff = 1,5mA; V CC = 3V t off <1 8 n s CMBT2369

Continental Device India Limited Data Sheet Page 3 of 3 Customer Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com