CMBT2222A RECTRON | Alldatasheet
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Collector current (d.c.) IC max 600 mA IC = 150mA; VCE = 10V > 40 hFE Collector-emmitter voltage (open base) VCEO max 40 V Collector-base voltage (open emitter) VCBO max 75 V Emmitter base voltage (open collector) Collector-base voltage (open emitter) VCBO max 75 Transition frequency at f = 100MHZ fT > 300 100 to 300 mWTamb = 25oC Collector current (d.c.) IC max 600 mA Total power dissipation up to Ptot max 250 MHZIC = 20mA; VCE = 20V Symbol Value UNIT VEBO max 6.0 V IC = 500mA; VCE = 10V D.C. current gain Collector-emitter voltage (open base) VCEO V VEBO max 6.0 VEmitter-base voltage (open collector) max 250 mW Tj max 150 oC Storge Temperature Tstg -55 to +150 Total power dissipation up to Tamb = 25oC Junction Temperature Thermal Resistance Rth j-a K/Wfrom junction to Ambient 500 Ptot oC UNITValueSymbol NPN Silicon Planar Epitaxial Transistors CMBT2222A Ratings (at TA = 25oC unless otherwise specified) Limmiting values Unit: inch (mm) Pin configuration: 1. BASE 2. EMITTER 3. COLLECTOR Absolute Maximum Ratings www.rectron.com 1 of 3
NPN Silicon Planar Epitaxial Transistors CMBT2222A Noise figure at RS = 1K ohm F < 4.0 dBIC = 100uA; VCE = 10V; f= 1kHZ pFIE = 0; VCB = 10V Input capacitance at f = 1 MHZ Ci < 25 pFIE = 0; VEB = 0.5V V IC = 10mA; VCE = 10V; Tamb= -55oC IC = 0.1mA; VCE = 10V IC = 1mA; VCE = 10V hFE > 35 > 50 > 75 > 35 100 to 300 D.C. current gain I C = 150mA; VCE = 1V IC = 500mA; VCE = 10V > 40 > 50 Transition frequency at f = 100 MHZ IC = 20mA; VCE = 20V IC = 500mA; IB = 50 mA < 1.0 < 2.0 VCEsat VBEsat Breakdown voltages IC = 0; IE = 10uA V V IC = 150mA; IB = 15 mA VCEsat < 300 mV VBEsat 0.6 to 1.2 V nA Base current IBEX < 20 nAwith reverse biased emitter junction VFB = 3V; VCE = 60V Collector cut-off current ICEX < 10 IE = 0; VCB = 60V I CBO < 0.01 ICBO IC = 150mA; VCE = 10V fT > 300 MHZ uAIE = 0; VCB = 60V; Tj = 125 oC Emitter-base cut-off current IEBO < 10 nAIC = 0; VEB = 3 V VEB = 3 V; VCE = 60V Symbol IC = 1.0mA; IB = 0 IC = 100uA; IE = 0 V(BR)CEO V(BR)CBO IC = 10mA; VCE = 10V Output capacitance at f = 1 MHZ CO < 8.0 Saturation voltage < 10 Value UNIT V(BR)EBO > 40 > 75 > 6.0 Characteristics (at Tj=25 oC unless otherwise specified) www.rectron.com 2 of 3
NPN Silicon Planar Epitaxial Transistors CMBT2222A td ns tr ts tffall time < 60 < 25 Turn-off time switched from IC= 150mA storage time < 225 Switching times (between 10% and 90% levels) Turn-on time switched to IC= 150mA delay time < 10 rise time www.rectron.com 3 of 3