CMA-252LN MINI | Alldatasheet

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Ultra Low Noise, High IP3 Monolithic Amplifier Page 1 of 6 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Product Overview Mini-Circuits CMA-252LN+ is a E-PHEMT based Ultra-Low Noise MMIC Amplifier with a unique combina - tions of low noise and high IP3 making this amplifier ideal for sensitive high dynamic range receiver ap - plications. This design operates on a single 3 to 4V supply. The MMIC amplifier is bonded to a multilayer integrated LTCC substrate and then hermetically sealed under a controlled nitrogen atmosphere with gold- plated covers and eutectic AuSn solder. These amplifiers have been tested to MIL requirements for gross leak, fine leak, thermal shock, vibration, acceleration, mechanical shock, and HTOL. Key Features 50Ω 1.5 to 2.5 GHz The Big Deal CASE STYLE: DL1721 CMA-252LN+ Feature Advantages Ultra Low Noise, 0.8 dB at 1.8 GHz Excellent noise figure performance. Increases signal to noise ratio. High IP3, +29 dBm at 1.8 GHz Combining Low Noise and High IP3 makes this MMIC amplifier ideal for use in Low Noise Receiver Front End (RFE) as it gives the user advantages at both ends of the dynamic range: sensitivity & two-tone IM performance. Adjustable Current Provides users ability to set current consumption over a wide range from 25 to 80 mA. Ceramic Hermetic Package Low inductance, repeatable performance, excellent reliability Max Input Power, +27 dBm Ruggedized design operates up to high input powers often seen at Receiver inputs eliminating the need for an external limiter. High Reliability Low, small signal operating current of 57 mA nominal maintains junction temperatures typically below 100°C at 85°C ground lead temperature.

Ultra Low Noise, High IP3 Monolithic Amplifier Page 2 of 6 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits simplified schematic and pad description Function Pad Number Description RF IN 3 Connects to RF input via C1 and Pad 2 via L1 RF-OUT 6 Connects to RF out via C2, Pad 8 via R1, and C3 RF-Ground 2 Connects to ground via C4 and Pad 3 via L1 Bias 1 Connects to Supply voltage (Vs) via Rbias Feedback 8 Connected to pads 6, 1 via R1 and C3 Ground 7 & paddle Connects to ground Not connected 4,5 Recommend connection to ground Product Features

  • Low Noise Figure, 0.8 dB at 1.8 GHz
  • High IP3, 30 dBm typ. at 1.8 GHz
  • P1dB 17 dBm typ. at 1.8 GHz
  • Adjustable Current, 25 to 80 mA
  • Adjustable Gain, ±1.5 dB
  • Active Bias
  • Small size - 3mm x 3mm x 1.14mm
  • Ceramic, hermetic, Nitrogen filled
  • No external matching components required REV. B M155058 CMA-252LN+ BT/CP 160222 General Description The CMA-252LN+ amplifier is fabricated using E-PHEMT technology and offers extremely high dynamic range with ultra low noise figure and good input and output return loss. Terminal finish is Ni-Pd-Au and it has repeatable performance from lot to lot due to fully automated, tightly controlled semiconductor and assembly processes. Typical Applications
  • Base station infrastructure
  • Satellite Communication (Inmarsat)
  • LTE
  • GPS
  • Tactical Air Navigation 4,5,7 paddle RF-Out and DC-IN 6RF-IN RF-Ground Ground Bias Feedback CMA-252LN+ CASE STYLE: DL1721 +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications 1 4 3 2 8 5 6 7 GND Bias RF In NC Gnd NC RF Out, DC Top View RF Gnd Feed Back 1.5-2.5 GHz * Enhancement mode pseudomorphic High Electron Mobility Transistor.

Monolithic E-PHEMT MMIC Amplifier Page 3 of 6 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Parameter Ratings Operating Temperature (ground lead) -55°C to 105°C Storage Temperature -65°C to 125°C Junction Temperature 150°C Total Power Dissipation 0.55 W Input Power (CW), Vs=3V or 4V +25 dBm (5 min. max) +20 dBm (continuos) DC Voltage 5.5V (5) Permanent damage may occur if any of these limits are exceeded. Electrical maximum ratings are not intended for continuous normal operation. Absolute Maximum Ratings(4) Electrical Specifications(1) at 25°C, unless noted CMA-252LN+ (1) Measured on Mini-Circuits Characterization test board TB-759+. See Characterization Test Circuit (Fig. 1) R1=825Ω, Rbias=619Ω (2) Current increases at P1dB (3) (Current at 85°C - Current at -45°C)/130 Parameter Condition (GHz) Vs=4V Vs=3V Units Min. Typ. Max. Typ. Frequency Range 1.5 2.5 GHz Noise Figure 1.5 0.7 0.7 dB 1.8 0.8 0.9 2.0 1.0 1.0 2.2 1.1 1.2 2.5 1.3 1.3 Gain 1.5 19.2 18.6 dB 1.8 18.3 17.6 2.0 16.8 16.2 2.2 16.1 15.4 2.5 15.1 14.2 Input Return Loss 1.5 19.0 14.0 dB 1.8 15.0 12.4 2.0 13.8 11.8 2.2 13.0 11.6 2.5 12.5 11.1 Output Return Loss 1.5 10.0 10.6 dB 1.8 22.5 26.0 2.0 16.5 16.0 2.2 11.2 10.8 2.5 7.6 7.1 Output Power @1 dB compression (2) 1.5 18.5 16.2 dBm 1.8 17.9 15.9 2.0 17.8 15.6 2.2 17.4 15.3 2.5 16.1 13.9 Output IP3 1.5 31.1 27.1 dBm 1.8 30.1 25.5 2.0 30.0 25.3 2.2 29.3 24.8 2.5 27.6 23.2 Device Operating Voltage 3.8 4.0 4.2 3.0 V Device Operating Current at typ. voltage(2) 57 70 41 mA DC Current Variation Vs. Temp. at typical voltage(3) -19 -3.4 µA/°C DC Current Variation Vs. Voltage 0.018 0.017 mA/mV Thermal Resistance 53 53 °C/W DC Current Histogram at Vs=4V 50-52 52-54 54-56 56-58 58-60 60-62 62-64 Current (mA)

Monolithic E-PHEMT MMIC Amplifier Page 4 of 6 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits CMA-252LN+ Fig 1. Application and Characterization circuit Note: This block diagram is used for characterization. (DUT soldered on Mini-Circuits Characterization test board TB-759+) Gain, Return loss, Output power at 1dB compression (P1 dB) , output IP3 (OIP3) and noise figure measured using Agilent’s N5242A PNA-X microwave network analyzer. Conditions: 1. Gain and Return loss: Pin= -25dBm 2. Output IP3 (OIP3): Two tones, spaced 2.5 MHz apart, 2 dBm/tone at output. Recommended Application and Characterization Test Circuit Rbias 4,5,7, paddle TB-759+ Product Marking MCL CMA- 252LN+ DC YYWW ceramic body model Typical Device Current vs Rbias (at R1=825 ohms) 0 200 400 600 800 1000 1200 1400 Rbias (Ohms) Current (mA) Vs=4V Vs=3V Suggested PCB Layout (PL-405)

Monolithic E-PHEMT MMIC Amplifier Page 5 of 6 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Adjustable Gain Performance (vs. R1) at Vs=4V Adjustable Gain Performance (vs. R1) at Vs=3V S21 (Amplitude,dB) Vs. Frequency and R1 Values 1500 1700 1900 2100 2300 2500 MHz S21Amplitude (dB)825 Ohms 2740 Ohms 274 Ohms 57.6 Ohms S11 (Amplitude,dB) Vs. Frequency and R1 Values -30 -25 -20 -15 -10 1500 1700 1900 2100 2300 2500 MHz S11 Amplitude (dB)

825 Ohms 2740 Ohms

274 Ohms 57.6 Ohms S22 (Amplitude,dB) Vs. Frequency and R1 Values -40 -35 -30 -25 -20 -15 -10 1500 1700 1900 2100 2300 2500 MHz S22 Amplitude (dB) 274 Ohms 57.6 Ohms Noise Figure (dB) Vs. Frequency and R1 Values 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1500 1700 1900 2100 2300 2500 MHz NF (dB) 274 Ohms 57.6 Ohms S11 (Amplitude, dB) vs. Frequency and R1 Values -16 -15 -14 -13 -12 -11 -10 1500 1700 1900 2100 2300 2500 MHz S21 Amplitude (dB) 274 Ohms 57.6 Ohms S21 (Amplitude, dB) vs. Frequency and R! Values 1500 1700 1900 2100 2300 2500 MHz S21 Amplitude (dB) 274 Ohms 57.6 Ohms S22 (Amplitude, dB) vs. Frequency and R1 Values -30 -25 -20 -15 -10 1500 1700 1900 2100 2300 2500 MHz S22 Amplitude (dB) 825 Ohms 2740 Ohms 274 Ohms 57.6 Ohms Noise Figure (dB) vs. Frequency and R1 Values 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1500 1700 1900 2100 2300 2500 MHz NF (dB) 274 Ohms 57.6 Ohms CMA-252LN+

Monolithic E-PHEMT MMIC Amplifier Page 6 of 6 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits CMA-252LN+ ESD Rating Human Body Model (HBM): Class 1A (250 to <1000V) in accordance with ANSI/ESD STM 5.1 - 2001 Machine Model (MM): Class M1 (pass 25V) in accordance with ANSI/ESD STM5.2-1999 MSL Rating Moisture Sensitivity: MSL1 (these parts are hermetic, air cavity and therefore, MSL ratings do not strictly apply. For handling purpose, use MSL1) Additional Detailed Technical Information additional information is available on our dash board. To access this information click here Performance Data Data Table Swept Graphs S-Parameter (S2P Files) Data Set (.zip file) Case Style DL1721 Ceramic package, exposed paddle, Terminla finish: NiPdAu Tape & Reel F66-1 Standard quantities available on reel 7” reels with 20, 50, 100, 200, 500 or 1K, 2K devices. Suggested Layout for PCB Design PL-406 Evaluation Board TB-759+ Environmental Ratings ENV-68 Additional Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Qualification Testing Test Description Test Method/Process Results 1 Hermeticity (fine and gross leak) MIL-STD-202 Method 112, Cond. C & D Pass 2 Acceleration, 30Kg, Y1 Direction MIL-STD-883 Method 2001 Cond. E Pass 3 Vibration , 10-2000Hz sine, 20g, 3 axis MIL-STD-202 Method 204, Cond. D Pass 4 Mechanical shock MIL-STD-202 Method 213, Cond . A Pass 5 PIND 20G’s @130 Hz MIL-STD-750 Method 2052.2 Pass

6 Temp Cycle -55C/+125C, 1000 Cycles MIL-STD-202 Method 107 Pass

7 Autoclave, 121C, RH 100%, 15 Psig, 96 hrs JESD22-A102C Pass

8 HTOL, 1000hrs, 105C at rated Voltage condition MIL-STD-202 Method 108, Cond . D Pass

9 Bend Test JESD22-B113 Pass

10 Resistance to soldering heat, 3x reflow, 260C peak JESD22-B102 Pass

11 Drop Test JESD22-B111 Pass

12 Adhesion Strength Push Test>10 lb Pass