CLL4150 CENTRAL | Alldatasheet
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Central’ CLL4150 Semiconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTORCLL4150 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, ina hermetically sealed glass surface mount package, designed for high speed switching applications. Marking Code: Cathode Band. SOD-80 CASE MAXIMUM RATINGS (T,=25°C) SYMBOL UNITS Continuous Reverse Voltage VR 50 Vv Peak Repetitive Reverse Voltage VRRM 50 Vv Continuous Forward Current IF 300 mA Peak Repetitive Forward Current lFRM 600 mA Forward Surge Current, tp=1 psec. FSM 4000 mA Forward Surge Current, tp=1 sec. lFSM 1000 mA Power Dissipation Pp 500 mw Operating and Storage Junction Temperature Ty.Tstg -65 to +200 °C Thermal Resistance JA 350 °C/W ELECTRICAL CHARACTERISTICS (T,=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS BVR IR=5.0HA 75 v IR VR=50V 100 nA Ve Ip=1.0mA 0.54 0.62 v Ve Ip=10mA 0.66 0.74 Vv Ve Ip=50mA 0.76 0.86 v Ve Ip=100mA 0.82 0.92 Vv VE Ip=200mA 0.87 1.0 v cr Vp=0, f=1 MHz 4.0 pF ter IR=IF=10mA, RL =1009, Rec. to 1.0mA 4.0 ns
All dimensions in inches (mm). -130(3.30) .146(3.71) .016(0.41) | Z ositi.eo)|, 1 : Fooaco.t0) .004(0.10) MAX 1MUM