CLL3595 CENTRAL | Alldatasheet
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Technical content
DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance applications. MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Peak Repetitive Reverse Voltage V RRM 150 V Peak Working Reverse Voltage V RWM 125 V Average Forward Current I O 150 mA Forward Steady-State Current I F 225 mA Recurrent Peak Forward Current i f 600 mA Peak Forward Surge Current (1.0s pulse) I FSM 500 mA Peak Forward Surge Current (1.0µs pulse) I FSM 4.0 A Power Dissipation P D 500 mW Operating and Storage Junction Temperature T J,Tstg -65 to +200 °C Thermal Resistance Θ JA 350 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS BVR IR=100µA 150 V IR VR=125V 1.0 nA IR VR=125V, TA=125°C 500 nA IR VR=125V, TA=150°C 3.0 µA IR VR=30V, TA=125°C 300 nA VF IF=1.0mA 0.54 0.69 V VF IF=5.0mA 0.62 0.77 V VF IF=10mA 0.65 0.80 V VF IF=50mA 0.75 0.88 V VF IF=100mA 0.79 0.92 V VF IF=200mA 0.83 1.00 V CT VR=0, f=1.0MHz 8.0 pF trr VR=3.5V, If=10mA, RL=1.0kΩ 3.0 µs CLL3595 SURFACE MOUNT LOW LEAKAGE SILICON DIODE SOD-80 CASE Central Semiconductor Corp. TM R1 ( 25-September 2001)
Semiconductor Corp. TM SOD-80 CASE - MECHANICAL OUTLINE CLL3595 SURFACE MOUNT LOW LEAKAGE SILICON DIODE R1 ( 25-September 2001)