CLE234E CLAIREX | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 1

Technical content

Clairex Technologies, Inc. 1301 East Plano Parkway Plano, Texas 75074-8524 Phone: 972-265-4900 Fax: 972-265-4949 www.clairex.com CLE234E Very High Output Aluminum Gallium Arsenide Quad chip IRED Array 1.00 (25.4) min. 0.019 (0.48) 0.016 (0.41) 0.147 (3.73) 0.137 (3.48) 0.010 (0.25) nom 0.213 (5.41) 0.207 (5.26) 0.130 (3.30) max 0.100 (2.54) pin circle0.050 (1.27) max CATHODE ANODE 0.169 (4.29) 0.163 (4.14) Case 6 Clairex Technologies, Inc. March, 2006 Cathode leads must be externally connected together ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)

features

  • very wide emission angle
  • 880nm wavelength
  • TO-46 header with epoxy dome
  • High power output

description

The CLE234E is an advanced, high efficiency, high speed AlGaAs infrared-emitting diode with four times the emitting surface of the typical AlGaAs emitter. High power output is achieved with four equally spaced cathode contacts for higher current distribution. Cathode contacts are bonded in pairs, each pair bonded to a separate lead, which need to be connected during operation. Chip size is 0.030” by 0.030”. The TO-46 header provides reliable operation over a wide temperature range. absolute maximum ratings (TA = 25°C unless otherwise stated) notes: 1. 0.06” (1.5mm) from the header for 5 seconds maximum. 2. Derate linearly 4.0mA/°C fr om 25°C free air temperature to TA = +125°C. 3. Derate linearly 4.0mW/°C fr om 25°C free air temperature to TA = +125°C. 4. Operation at this level requires a proper heat sink. Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. electrical characteristics (TA = 25°C unless otherwise noted) symbol parameter min typ max units test conditions PO Total power output - 8.0 - mW I F = 100mA VF Forward voltage - 1.65 1.8 V I F = 100mA IR Reverse current - - 10 µA VR = 5V λp Peak emission wavelength - 880 - nm I F = 100mA BW Spectral bandwidth at half power it - 45 - nm I F = 100mA θHP Emission angle at half power points - 100 - deg. I F = 100mA tr, tf Radiation rise and fall time - 700 - ns I F(PK) = 100mA, f = 1kHz, D.C. = 50% (connected to case) ANODE CATHODE Revised 3/15/06