CLD340 CLAIREX | Alldatasheet

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Technical content

Clairex Technologies, Inc. 1301 East Plano Parkway Plano, Texas 75074-8524 Phone: 972-265-4900 Fax: 972-265-4949 www.clairex.com CLD340 High Temperature AlGaAs Photodiode Clairex Technologies, Inc. January, 2002

features

  • usable at 225°C
  • 880nm wavelength
  • narrow response range
  • hermetically sealed TO-46 package
  • ±35° acceptance angle

description

The CLD340 is a high temperature AlGaAs photodiode designed for sensitivity from 830 to 910nm. This specialty detector eliminates the need for signal modulation or filtering of ambient light when used where background illumination could cause problems. The 0.040" by 0.040" chip is mounted in a flat window TO-46 package. The CLE335 is recommended for optical coupling. absolute maximum ratings (TA = 25°C unless otherwise stated) notes: 1. 0.06” (1.5mm) from the header for 5 seconds maximum. 2. Derate linearly 1.0mW/°C from 25°C free air temperature to T A = +225°C. fundamental characteristics spectral response light current vs temp. dark current vs temp. Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. 0.147 (3.73) 0.137 (3.48) CATHODE ANODE 0.205 (5.21) 0.215 (5.46) 0.190 (4.83) 0.176 (4.47) 0.100 (2.54) dia. 0.165 (4.19) 0.145 (3.68) 0.025 (0.64) max. 0.019 (0.48) 0.016 (0.41) 1.00 (25.4) min. 0.010 (0.25) max 0.136 (3.45) 0.156 (3.96) Case 3 100 600 700 800 900 1000 11 relative response (percent) silicon photodiode wavelength (nanometers) AlGaAs photodiode 0 50 100 150 200 2 5 light current (microamps) temperature (°C) CLE335 source at same temperature as CLDX340. = 850nm at 25°Cλ H = 1mW/cm², and 0 50 100 150 200 2 5 1.0 temperature (°C) short circuit dark current (nA) ALL DIMENSIONS ARE IN INCHES(MILLIMETERS) Revised 3/6/06 CLD340

Clairex Technologies, Inc. 1301 East Plano Parkway Plano, Texas 75074-8524 Phone: 972-265-4900 Fax: 972-265-4949 www.clairex.com CLD340 High Temperature AlGaAs Photodiode electrical characteristics at TA = 25°C (unless otherwise noted) symbol parameter min typ max units test conditions ISC Short-circuit current(3) 2.0 3.5 - µA VBIAS = 0V, Ee = 1mW/cm2 ID Dark current - 0.1 1.0 nA V R = 5V, Ee = 0 RS Shunt resistance - 3000 - Meg.Ω VR = 10mV VBR Reverse breakdown 20 - - V IR = 10µA Cj Junction capacitance - 170 - pF V BIAS = 0, f = 1MHz ΘHP Total angle at half sensitivity points - 70 - deg. tr, tf 0utput rise and fall time(3) - 1.0 - µs R L = 50Ω, VR = 5V note: 3. Radiation source is an aluminum gallium arsenide IRED with a peak emission wavelength of 850nm. Clairex Technologies, Inc. Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.