CHUMD3PT

CHUMD3PT CHENMKO | Alldatasheet

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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION FEATURE * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. * Switching circuit, Inverter, Interface circuit, Driver circuit. * Low colloector-emitter saturation. * High saturation current capability. * Both the CHDTA114E & CHDTC114E in one package. * Built in bias resistor(R1=10kΩ, Typ. ) CIRCUIT SC-88/SOT-363 CHDTA114E LIMITING V ALUES In accordance w ith the Absolute M axim um R ating System (IEC 60134). Note Transistor mounted on an FR4 printed-circuit board. 4 6 3 1 R2 R1 R2R1 SYM B O L PA R A M ETER C O N D ITIO N S M IN . M A X. U N IT VC C Supply voltage − -50 V VIN Input voltage -40 +10 V IO − -50 IC (M ax.) D C O utput current − -100 m A PTO T Total pow er dissipation Tam b ≤ 25 O C , N ote 1 − 150 m W TSTG Storage temperature −55 +150 O C TJ Junction temperature − 150 O C MARKING * AD Dimensions in millimeters SC-88/SOT-363 0.8~1.10.08~0.15 0~0.1 2.15~2.45 0.1 Min. 0.65 0.65 1.2~1.4 2.0~2.2 0.15~0.35 1.15~1.35 (1) (3) (6) (4)

In accordance with the Absolute Maximum Rating System (IEC60134). Note Transistor mounted on an FR4 printed-circuit board. CHDTA114E CHARA CTERISTICS Tamb =2 5 °C unless otherwise speciÞed. Note Pulse test: tp≤300uS; δ≤0.02. CHDTC114E CHARA CTERISTICS Note Pulse test: tp≤300uS; δ≤0.02. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC Supply voltage − 50 V VIN Input voltage -10 +40 V IO − 50 IC(Max.) DC Output current − 100 mA PTOT Total power dissipation Tamb ≤ 25 O C, Note 1 − 150 mW TSTG Storage temperature −55 +150 O C TJ Junction temperature − 150 O C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VIoff) Input off voltage IO =-100uA; VCC =-5.0V -0.5 V VI(on) Input on voltage IO =-10mA; VO =-0.3V -3.0 V VVO(on) Output voltage IO =-10mA; II=-0.5mA − -0.3 II Input current VI=-5V − − -0.88 mA IC(off) Output current R 1 Input resistor VI=0V; VCC =-50V hFE DC current gain IO =-5mA; VO =-5.0V − -0.5 30 − 13.07.0 KΩ R 2/R1 Resistor ratio 0.8 1.2 10.0 1.0 uA fT Transition frequency IE=5mA, VCE =-10.0V f=100MHz= − −250 MHz SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VIoff) Input off voltage IO =100uA; VCC =5.0V − 0.5 V VI(on) Input on voltage IO =10mA; VO =0.3V 3.0 − − V VVO(on) Output voltage IO =10mA; II=0.5mA − 0.30.1 II Input current VI=5V − − 0.88 mA IC(off) Output current R 1 Input resistor VI=0V; VCC =50V hFE DC current gain IO =5mA; VO =5.0V − 0.5 30 − 13.07.0 KΩ R 2/R1 Resistor ratio 0.8 1.2 10.0 1.0 uA fT Transition frequency IE=-5mA, VCE =10.0V f=100MHz= − −250 MHz Tamb =2 5 °C unless otherwise speciÞed. 0.1

RATING CHARACTERISTIC CURVES ( CHUMD3PT ) CHDTA114E Typical Electrical Characteristics VO =-0.3V IN PU T VO LTAG E : VI(on) (V) O U TPU T C U R R EN T : IO (A) -100 -50 -20 -10 -200m -100m -100 -1m -10m -100m-200 -500 -2m -20m-5m -50m -500m VC C 5V -0 -3.0 -10m -2m -5m -1m -200 -500 -100 -20 -50 -10 IN PU T VO LTAG E : VI(off) (V) O U TPU T C U R R EN T : Io (A) VO 5V D C C U R R EN T G AIN : G I O U TPU T C U R R EN T : IO (A) 500 200 100 -100 -1m -10m -100m-200 -2m -20m-500 -5m -50m lO /lI20-1 -500m -200m -100m -10m -50m -5m -20m -2m -1m O U TPU T C U R R EN T : IO (A) O U TPU T VO LTAG E : VO (on) (V) -100 -1m -10m -100m-200 -2m -20m-500 -5m -50m Ta=100C 25C -40C Ta=100C 25C -40C Ta 40 O O O C 25 C 100 C Ta100C 25C -40C O O O O O O O O O =- = Fig.3 D C current gain vs. output current Fig.4 O utput voltage vs. output current Fig.1 Input voltage vs. output current (O N characteristics) Fig.2 O utput current vs. input voltage (O FF characteristics)

RATING CHARACTERISTIC CURVES ( CHUMD3PT ) CHDTC114E Typical Electrical Characteristics O U TPU T C U R R EN T : IO (A) D C C U R R EN T G AIN : G I 100 200 5001m 2m 5m 10m 20m 50m 100m 500 200 100 VO 5V Ta= 100C 25C -40C Fig.3 D C current gain vs. output current O U TPU T C U R R EN T : IO (A) O U TPU T VO LTAG E : VO (on) (V) 100 200 500 1m 2m 5m 10m 20m 50m 100m 500m 200m 100m 50m 20m 10m lO /lI 20 Ta= 100C 25C -40C Fig.4 O utput voltage vs. output current IN PU T VO LTAG E : VI(on) (V) O U TPU T C U R R EN T : IO (A) 100 200 500 1m 2m 5m 10m 20m 50m 100m 100 500m 200m 100m VO = 0.3V Ta 40 O O O C 25 C 100 C Fig.1 Input voltage vs. output current (O N characteristics) IN PU T VO LTAG E : VI(off) (V) O U TPU T C U R R EN T : Io (A) 0 3.0 10m 200 500 100 VC C =5V Ta100C 25C -40C Fig.2 O utput current vs. input voltage (O FF characteristics) O O O O O O O O O