CHT857BTPT CHENMKO | Alldatasheet

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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Muti-Chip General Purpose Amplifier VOLTAGE 45 Volts CURRENT 0.1 Ampere APPLICATION FEATURE * High current gain. * Suitable for high packing density. * AF input stages and driver applicationon equipment. * Other general purpose applications. * Low colloector-emitter saturation. * High saturation current capability. mWCollector power dissipationC 150 2004-10 LIM ITIN G VA LU ES In accordance w ith the Absolute M axim um R ating System (IEC 60134). N ote 1. Transistor m ounted on an FR 4 printed-circuit board. SYM B O L PA R A M ETER C O N D ITIO N S UNIT V C BO collector-base voltage open emitter -50 V V CEO collector-emitter voltage open base -45 V VVEBO em itter-base voltage open collector -5 IC collector current (D C ) -0.1 A P Tstg storage temperature −55~+150 °C Tj junction temperature +150 °C CIRCUIT SC-75/SOT-416 * Small surface mounting type. (SC-75/SOT-416) MARKING * HFE(Q):UC * HFE(R):VC * HFE(S):WC Dimensions in millimeters SC-75/SOT-416 (1) (2) (3) 0.5 0.6~0.9 0.3± 0.15±0.05 0.8±0.1 1.6±0.2 0.1Min. 0.2±0.10.05 0~0.1

RATING CHARACTERISTIC CURVES ( CHT857BTPT) Typical Pulsed C urrent G ain vs C ollector C urrent 0.01 0 .1 1 10 100 100 200 300 400 500 I - CO LLEC TO R C UR R EN T (m A ) h - TYPIC A L PULSED CU R R EN T G A IN C FE 125 C 25 °C - 40 °C V = 5VCE C ollector-Em itter Saturation Voltage vs C ollector Current 0.1 1 10 10 0 300 0.05 0.1 0.15 0.2 0.25 0.3 I - C O LLEC TO R C UR RE NT (m A) V - CO LLEC TO R EM ITTE R VO LTA G E (V) C CESAT 25 °C - 40 °C 125 °C β = 10 RATING CHARACTERISTIC ( CHT857BTPT) TH ER M A L C H A R AC TER ISTIC S CHARA Cob CTERISTICS collector output capacitance T I amb C 0; V CB C unless otherwise speciÞed. =- 0.5V; f=1M H z 8 pF Typ. V SYMBOL CE P ARAMETER C CONDITIONS =-5V/-2 mA MIN. MAX. UNIT ICBO CBO collector cut-off current EBO I BV E CEO BV 0; V BV CB collector-emitter breakdown voltage = -30 V collector-base breakdown voltage emitter-base breakdown voltage -15 nA− I C −=-10mA 0; V CB = -30 V; TA = 150 O C V V uA V h -50 FE -45 DC current transfer ratio IC -125 -800 I V C CEsat =-10uA collector-emitter satur I ation E v =-1uA oltage I −C -700 -10 mA ; IB = -0.5 mA I C = -100 mA ; IB = -5 mA − -650 -300 mV mV VBEsat base-emitter saturation voltage IC = -10mA;IB = -0.5 mA Cib emitter input capacitance IE = 0; VCB = -10V; f=1M H z mV − 3 pF fT transition frequency IE = -20 mA; VCE =5 V;f = 100 MHz 100 MHz Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. 2. hFE: Classification Q: 125 to 250, R: 220 to 475, S: 420 to 800

RATING CHARACTERISTIC CURVES ( CHT857BTPT) C ollector Saturation R egion 100 300 700 2000 4000 I - B A SE CU R RENT (uA ) V - C O LLEC TO R -E M ITTER VO LTAG E (V)CE B 50 m A 300 m A100 uA Ta = 25°C Ic = CER C ollector-Em itter Breakdow n Voltage w ith R esistance B etw een Em itter-B ase 0.1 1 10 100 1000 R E SISTA N C E (k ) BV - BRE AK D O W N V O LTAG E (V ) Input and O utput C apacitance vs R everse Voltage 0.1 1 10 100 100 V - CO LLEC TO R VO LTA G E (V) C APAC ITA N CE (pF) Cib C ob f = 1.0 M H z C E C ollector-C utoff Current vs A m bient Tem perature 25 50 75 10 0 125 0.01 0.1 10 0 T - A M BIE NT TEM P ER ATUR E ( C) I - C O LLE CTO R CU RR EN T (nA) A CBO V = 50VC B B ase-Em itter Saturation Voltage vs C ollector Current 0.1 1 10 100 300 0.2 0.4 0.6 0.8 1.2 I - C O LLEC TO R C UR RE NT (m A) V - BA SE EM ITTE R VO LTA G E (V) C BESAT β= 10 25 °C - 40 °C 125 °C B ase E m itter O N Voltage vs C ollector Current 0.1 1 10 100 200 0.2 0.4 0.6 0.8 I - C O LLEC TO R C UR RE NT (m A) V - B AS E EM ITTER O N VO LTA G E (V) C BEON V = 5VC E 25 °C - 40 °C 125 °C Ω

RATING CHARACTERISTIC CURVES ( CHT857BTPT) Sw itching Tim es vs C ollector C urrent 10 20 30 50 100 200 300 120 150 180 210 240 270 300 I - C O LLEC TO R C U R R EN T (m A) TIM E (nS) IB 1 = IB 2 = Ic / 10 V = 10 V C cc ts td tf tr G ain B andw idth Product vs C ollector C urrent 1 10 20 50 100 150 I - C O LLEC TO R C UR RENT (m A ) f - G A IN BA ND W ID TH PRO DU CT (M H z) C T V = 5Vce