CHT8050PT CHENMKO | Alldatasheet
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VOLTAGE 20 Volts CURRENT 700 mAmpere CHT8050PT LIMITING V CHENMKO ENTERPRISE CO.,LTD ALUES SURFACE MOUNT In accordance with the Absolute Maxim EPITAXIAL Transistor um Rating System (IEC60134). Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL FEATURE P * High DC current . ARAMETER CONSTRUCTION CONDITIONS * NPN transistors in one package. MIN. MAX. 2008-01 UNIT VCBO collector-base v oltage open emitter − 25 V VCEO collector-emitter voltage open base − 20 V VEBO emitter-base voltage open collector − 5 IC collector current (DC) − 700 mA Ptot total pow er dissipation Tamb ≤ 25 °C; note 1 − 225 mW Tstg storage temperature −55 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −55 +150 °C V SOT-23 * Small surface mounting type. (SOT-23) CIRCUIT MARKING * D805 Dimensions in millimeters SOT-23 .119 (3.04) .007 (0.177) .002 (0.05) .110 (2.80) .103 (2.64) .028 (0.70) .020 (0.50) .055 (1.40) .047 (1.20) .045 (1.15) .033 (0.85) .086 (2.20) .082 (2.10) .041 (1.05) .019 (0.50) .018 (0.30) .033 (0.85) .066 (1.70) (1) (2) (3) * E805 (1) (2) (3) E C B
Tamb =2 5 °C unless otherwise speciped. I SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current VEB = 5V − 100 nAIEBO emitter cut-off current C = 150 mA; VCE = 1V IC = 150 mA; VCE = 1.0V − 1000 mVVBEon base-emitter voltage V(BR)CBO V(BR)CEO V(BR)EBO collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage IC = -10 uA ; IE = 0A IC = -1mA ; IB = 0A IE = -10 uA ; IC = 0A − V − V − V hFE DC current gain VCEsat collector-emitter saturation C cb output capacitance VCB = 20V − 1.0 uA 150 500 IC = 500 mA; IB = 50 mA − 500 mV VCB=-10V; f=1.0MHZ; IE=0 10− pF RATING CHARACTERISTIC CURVES ( CHT8050PT ) fT transition frequency VCB=10V; Ic=20mA; f=100MHz 150 − MHz 2. hFE: D Classification: 150~300 E Classification: 2 50~500