CHT55PT CHENMKO | Alldatasheet
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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP General Purpose Transistor - VOLTAGE 60 Volts CURRENT 0.5 Ampere APPLICATION FEATURE * Small surface mounting type. (SOT-23) * Low current (Max.=500mA). * Suitable for high packing density. CONSTRUCTION * PNP General Purpose Transistor * General purpose applications. 2002-5 * Low voltage (Max.=60V) . * High saturation current capability. CIRCUIT MARKING * T55 E C B LIM ITIN G VA LU ES In accordance w ith the Absolute M axim um R ating System (IEC 60134). N ote 1. Transistor m ounted on an FR 4 printed-circuit board. SYM B O L PA R A M ETER C O N D ITIO N S M IN . M A X. U N IT VC BO collector-base voltage open em itter − -60 V VC EO collector-em itter voltage open base − -60 V VVEBO em itter-base voltage open collector − -4 IC collector currentD C − -500 m A IC M peak collector current − -500 m A IBM peak base current − -100 m A Ptot total pow er dissipation Tam b ≤ 25 °C ; note 1 − 350 m W Tstg storage tem perature −55 +150 °C Tj junction tem perature − 150 °C Tam b operating am bient tem perature −55 +150 °C (1) (2) (3) SOT-23 .119 (3.04) .007 (0.177) .002 (0.05) .110 (2.80) .103 (2.64) .028 (0.70) .020 (0.50) .055 (1.40) .047 (1.20) .045 (1.15) .033 (0.85) .086 (2.20) .082 (2.10) .041 (1.05) .019 (0.50) .018 (0.30) .033 (0.85) .066 (1.70) (1) (2) (3) Dimensions in inches and (millimeters) SOT-23
RATING CHARACTERISTIC CURVES ( CHT55PT ) TH ER M A L C H A R AC TER ISTIC S N ote 1. Transistor m ounted on an FR 4 printed-circuit board. C H A R AC TER ISTIC S Tam b = 25 °C unless otherw ise speciÞed. N ote 1. Pulse test: tp ≤ 300 µs;δ ≤ 0.02. SYM B O L PA R A M ETER C O N D ITIO N S VA LU E U N IT R th j-a therm al resistance from junction to am bient note 1 357 K/W SYM B O L PA R A M ETER C O N D ITIO N S M IN . M A X. U N IT IC BO collector cut-off current IE = 0; VC B = -60 V − -0.1 uA IEBO em itter cut-off current IC = 0; VEB = -4 V − -0.1 uA hFE D C current gain VC E = -1.0 V; note 1 IC = -10 m A 100 − IC = -100 m A 100 − VC Esat collector-em itter saturation voltage IC = -100m A; IB =-10 m A − -0.25 V VBEsat base-em itter saturation voltage IC = -100m A; VC E = -1.0 V -1.2 V C cb collector-base capacitance IE = ie = 0; VC B =-20V ; f= 1 M H z − 3 pF fT transition frequency IC = 100 m A; VC E =-1.0 V ; f= 100 M H z 50 − M H z