CHT5113PPT CHENMKO | Alldatasheet

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CHENMKO ENTERPRISE CO.,LTD SMALL FLAT NPN Epitaxial Transistor VOLTAGE 60 Volts CURRENT 6 Amperes APPLICATION FEATURE * Small flat package. ( DPAK ) * Low saturation voltage VCE(sat)=0.55V(Max.)(I C/IB=6A/0.3A) CONSTRUCTION * NPN Cilicon Transistor * High current amplifier. THERMAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) NOTES : CHARACTERISTICS CONDITION SYMBOL UNITS 357 oC / WThermal Resistance (Junction to Ambient) Note 1 R JA VALUE 2. Measured at Pulse Width 300 us, Duty Cycle 2%. .024 (0.60) .035 (0.90) DPAK DPAKDimensions in inches and (millimeters) CIRCUIT .094 (2.38) .086 (2.19) .022 (0.55) .018 (0.45) .030 (0.77) .050 (1.27) .020 (0.51) .050 (1.27) .023 (0.58) .018 (0.46) .020 (0.51) .268 (6.80) .252 (6.40) .228(5..80) .217 (5.40) .110 (2.80) .087 (2.20) .028 (0.70) .019 (0.50) .394 (10.00) .354 (9.00)

1 Base

3 Collector ( Heat Sink )

2 Emitter

(1) (3) (2) .181 (4.60) (2) (1) (3) E C B 2007-05 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS CONDITION Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Open Emitter Open Base Open Collector Collector Current DC Peak Collector Current Total Power Dissipation TA ≤ 25OC Storage Temperature Junction Temperature Operating Ambient Temperature SYMBOL VCBO VCEO VEBO TAMB TJ TSTG ICM IC CHT5113PPT UNITS 150 Volts Volts Volts Amps Amps W oC oC oC 1.0 -55 to +150 +150 -55 to +150 PTOT

RATING CHARACTERISTIC CURVES ( CHT5113PPT ) CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) Emitter-Base breakdown voltage IE=100uA 6 8 Collector Cut-off Current Emitter Cut-off Current IE=0; VCB=120V IC=0; VEB=6V ICBO PARAMETERS IEBO CONDITION Collector-Base breakdown voltage Collector-Emitter breakdown voltage nA DC Current Gain nA IC=100uA IC=10mA VCE=1V; IC=10mA Collector-Emitter Saturation Voltage IC=100mA; IB=5mA IE=ie=0; VCB=10V; f=1MHz IE=-100mA; VCE=10V Collector Output Capacitance Transition Frequency SYMBOL BVCBO hFE Cob fT VBEsat MIN. MAX. TYPE UNITS 150 - Volts Volts mVolts Volts pF BVCEO BVEBO MHz 100 - 5020 - -50 - -150 170 VCE=1V; IC=2A VCE=1V; IC=5A VCE=1V; IC=10A 120 200 100 300 IC=1A; IB=50mA IC=2A; IB=100mA IC=6A; IB=300mA 150 400 120 550 220 Base-Emitter Saturation Voltage IC=6A; IB=300mA VCEsat 1.15 1.3 Volts- Base-Emitter On Voltage VCE=1V; IC=6A VBEon 1.05 1.2 Volts-