CHT4401PT CHENMKO | Alldatasheet

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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION FEATURE * Low current (Max.=600mA). * Suitable for high packing density. CONSTRUCTION * NPN Switching Transistor * Telephony and proferssional communction equipment. * Other switching applications. 2004-11 * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch. LIM ITIN G VA LU ES In accordance w ith the Absolute M axim um R ating System (IEC 60134). N ote 1. Transistor m ounted on an FR 4 printed-circuit board. SYM B O L PA R A M ETER C O N D ITIO N S M IN . M A X. U N IT VCBO collector-base voltage open emitter − 60 V VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 6V IC collector current DC − 600 mA Ptot total pow er dissipation Tamb ≤ 25 °C; note 1 − 350 mW Tstg storage tem perature −55 +150 °C Tj junction tem perature − 150 °C Tam b operating am bient tem perature −55 +150 °C * Small flat package. ( SOT-23 ) SOT-23 CIRCUIT MARKING * S1P .119 (3.04) .007 (0.177) .002 (0.05) .110 (2.80) .103 (2.64) .028 (0.70) .020 (0.50) .055 (1.40) .047 (1.20) .045 (1.15) .033 (0.85) .086 (2.20) .082 (2.10) .041 (1.05) .019 (0.50) .018 (0.30) .033 (0.85) .066 (1.70) (1) (2) (3) Dimensions in inches and (millimeters) SOT-23

RATING CHARACTERISTIC CURVES ( CHT4401PT ) TH ER M A L C H A R AC TER ISTIC S N ote 1. Transistor m ounted on an FR 4 printed-circuit board. C H A R AC TER ISTIC S Tam b = 25 °C unless otherw ise speciÞed. N ote 1. Pulse test: tp ≤ 300 µs;δ ≤ 0.02. SYM B O L PA R A M ETER C O N D ITIO N S VA LU E U N IT R th j-a therm al resistance from junction to am bient note 1 200 SYM B O L PA R A M ETER C O N D ITIO N S M IN . M A X. U N IT IC BO collector cut-off current IE = 0; VC B = 60 V − 50 nA IEBO em itter cut-off current IC = 0; VEB = 6 V − 50 nA hFE D C current gain VC E = 1 V; note 1 IC = 0.1 mA 20 − IC = 1 mA 40 − IC = 10 m A 80 300IC =15 0m A 100 IC = 500 mA 40 − VC Esat collector-em itter saturation voltage IC = 150 mA; IB =15m A − 400 mV IC = 500 mA; IB =50m A − 750 mV VBEsat base-em itter saturation voltage IC = 150 mA; IB = 15 mA 750 950 mV IC = 500 mA; IB =50m A − 1200 mV C c collector capacitance IE = ie = 0; VC B = 5 V; f= 140KH z − C e em itter capacitance IC = ic = 0; VBE = 500 m V; f = 140 KHz fT transition frequency IC = 20 m A; VC E = 10 V; f= 100 M H z 250 − M H z Sw itching tim es (betw een 10% and 90% levels); ton turn-on tim e IC on = 150 mA; IBon = 15 mA; IBoff = −15m A − 35 ns td delay tim e − 15 ns tr rise tim e − 20 ns toff turn-off tim e − 250 ns ts storage tim e − 200 ns tf fall tim e − 60 ns V CE = 2 V;note 2 6.5 30 pF pF °C/W

RATING CHARACTERISTIC CURVES ( CHT4401PT ) Typical Characteristics Typical Pulsed Current Gain vs Collector Current 0.1 0.3 1 3 10 30 100 300 100 200 300 400 500 I - COLLECTOR CURRENT (mA) h - TYPICAL PULSED CURRENT GAIN C FE 125 °C 25 °C - 40 °C V = 5VCE Collector-Emitter Saturation Voltage vs Collector Current 11 0 1 00 5 00 0.1 0.2 0.3 0.4 I - COLLECTOR CURRENT (mA) V - COLLECTOR-EMITTER VOLTAGE (V) CES AT 25 °C C β = 10 125 °C - 40 °C Base-Emitter Saturation Voltage vs Collector Current 1 10 100 500 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER VOLTAGE (V) BESA T C β = 10 25 °C 125 °C - 40 °C Base-Emitter ON Voltage vs Collector Current 0.1 1 10 25 0.2 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER ON VOLTAGE (V) BE (ON) C V = 5VCE 25 °C 125 °C - 40 °C Collector-Cutoff Current vs Ambient Temperature 25 50 75 100 125 150 0.1 100 500 T - AMBIENT TEMPERATURE ( C) I - COLLECTOR CURRENT (nA) A V = 40VCB CBO Emitter Transition and Output Capacitance vs Reverse Bias Voltage 0.1 1 10 100 REVERSE BIAS VOLTAGE (V) CAPACITANCE (pF) f = 1 MHz C ob C

RATING CHARACTERISTIC CURVES ( CHT4401PT ) Power Dissipation vs Ambient Temperature 0 25 50 75 100 125 150 0.25 0.5 0.75 TEMPERATURE ( C) P - POWER DISSIPATION (W) D o SOT-223 TO-92 SOT-23 Turn On and Turn Off Times vs Collector Current 10 100 1000 160 240 320 400 I - COLLECTOR CURRENT (mA) TIME (nS) I = I = ton t off C Ic V = 25 Vcc Switching Times vs Collector Current 10 100 1000 160 240 320 400 I - COLLECTOR CURRENT (mA) TIME (nS) I = I = tr t s C Ic V = 25 Vcc tf td

RATING CHARACTERISTIC CURVES ( CHT4401PT ) Common Emitter Characteristics 0 1 02 03 04 05 06 0 I - COLLECTOR CURRENT (mA) CHAR. RELATIVE TO VALUES AT I = 10mA V = 10 VCE C C T = 25 CA o hoe hre hfe hie Common Emitter Characteristics 0 2 04 06 08 0 1 0 0 0.4 0.8 1.2 1.6 2.4 T - AMBIENT TEMPERATURE ( C) CHAR. RELATIVE TO VALUES AT T = 25 C V = 10 VCE A A I = 10 mAC hoe hre hfe hie o o Common Emitter Characteristics 0 5 10 15 20 25 30 35 0.75 0.8 0.85 0.9 0.95 1.05 1.1 1.15 1.2 1.25 1.3 V - COLLECTOR VOLTAGE (V) CHAR. RELATIVE TO VALUES AT V = 10V CE CE T = 25 CA o hoe hre hfe hie I = 10 mAC

RATING CHARACTERISTIC CURVES ( CHT4401PT ) Test Circuits 30 V

1.0 KΩ ΩΩ ΩΩ

500 Ω ΩΩ ΩΩ 200 Ω ΩΩ ΩΩ 50 Ω ΩΩ ΩΩ 37 Ω ΩΩ ΩΩ - 1.5 V 6.0 V 30 V FIGURE 1: Saturated Turn-On Switching Timer NOTE: BV = 5.0 V FIGURE 2: Saturated Turn-Off Switching Time EBO