CHT3946UPNPT

CHT3946UPNPT CHENMKO | Alldatasheet

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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Complementary Small Signal Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION FEATURE * Low current (Max.=200mA). * Suitable for high packing density. CONSTRUCTION * Complementary Pair * Telephony and proferssional communction equipment. * Other switching applications. 2004-8 * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch. CIRCUIT MARKING * U4 CH3904 LIMITING VALUES In accordance w ith the Absolute M axim um R ating System (IEC 60134). Note 1.Transistor mounted on an FR4 printed-circuit board. SYM B O L PA R A M ETER C O N D ITIO N S M IN . M A X. U N IT VC BO collector-base voltage open em itter − 60 V VC EO collector-em itter voltage open base − 40 V VEBO em itter-base voltage open collector − 6 V IC collector currentD C − 200 m A Ptot total pow er dissipation Tamb ≤ 25 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − -40 V VCEO collector-emitter voltage open base − -40 V VVEBO emitter-base voltage open collector − IC collector currentDC − -200 mA Ptot total pow er dissipation Tamb ≤ 25 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C CH3906 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC60134). SC-88/SOT-363 1 3 6 4 * Small surface mounting type. (SC-88/SOT363) * One CH3904-Type NPN One CH3906-Type PNP Dimensions in millimeters SC-88/SOT-363 0.8~1.10.08~0.15 0~0.1 2.15~2.45 0.1 Min. 0.65 0.65 1.2~1.4 2.0~2.2 0.15~0.35 1.15~1.35 (1) (3) (6) (4)

RATING CHARACTERISTIC CURVES ( CHT3946UPNPT ) CH3904 THERMAL CHARA CTERISTICS N ote 1. Transistor m ounted on an FR 4 printed-circuit board. CH3904 CHARA CTERISTICS Tam b = 25 °C unless otherw ise speciÞed. N ote 1. Pulse test: tp ≤ 300 µs;δ ≤ 0.02. SYM B O L PA R A M ETER C O N D ITIO N S VA LU E U N IT R th j-a therm al resistance from junction to am bient note 1 500 K/W SYM B O L PA R A M ETER C O N D ITIO N S M IN . M A X. U N IT IC BO collector cut-off current IE = 0; VC B = 30 V − 50 nA IEBO em itter cut-off current IC = 0; VEB = 6 V − 50 nA hFE D C current gain VC E = 1 V; note 1 IC = 0.1 m A 40 − IC = 1 m A 70 − IC = 10 m A 100 300 IC = 50 m A 60 − IC = 100 m A 30 − VC Esat collector-em itter saturation voltage IC = 10 m A; IB = 1 m A − 200 m V IC = 50 m A; IB = 5 m A − 300 m V VBEsat base-em itter saturation voltage IC = 10 m A; IB = 1 m A 650 850 m V IC = 50 m A; IB = 5 m A − 950 m V C c collector capacitance IE = ie = 0; VC B = 5 V; f= 1 M H z − 4 pF C e em itter capacitance IC = ic = 0; VBE = 500 m V; f= 1 M H z − 8 pF fT transition frequency IC = 10 m A; VC E = 20 V; f= 100 M H z 300 − M H z F noise Þgure IC = 100 µA; VC E = 5 V; R S = 1 kΩ ; f= 10 H z to 15.7 kH z − 5 dB Sw itching tim es (betw een 10% and 90% levels); ton turn-on tim e IC on = 10 m A; IBon = 1 m A; IBoff= −1 m A − 65 ns td delay tim e − 35 ns tr rise tim e − 35 ns toff turn-off tim e − 240 ns ts storage tim e − 200 ns tf fall tim e − 50 ns

RATING CHARACTERISTIC CURVES ( CHT3946UPNPT ) CH3906 THERMAL CHARA CTERISTICS N ote 1. Transistor m ounted on an FR 4 printed-circuit board. CH3906 CHARA CTERISTICS Tam b = 25 °C unless otherw ise speciÞed. N ote 1. Pulse test: tp ≤ 300 µs;δ ≤ 0.02. SYM B O L PA R A M ETER C O N D ITIO N S VA LU E U N IT R th j-a therm al resistance from junction to am bient note 1 500 K/W SYM B O L PA R A M ETER C O N D ITIO N S M IN . M A X. U N IT IC BO collector cut-off current IE = 0; VC B = -30 V − -50 nA IEBO em itter cut-off current IC = 0; VEB = 6 V − -50 nA hFE D C current gain VC E = -1V; note 1 IC = -0.1m A 60 − IC = -1m A 80 − IC = -10 m A 100 300 IC = -50 m A 60 − IC = -100 m A 30 − VC Esat collector-em itter saturation voltage IC = -10 m A; IB = -1 m A − -250 m V IC = -50 m A; IB = -5 m A − -650 -400 m V VBEsat base-em itter saturation voltage IC = -10 m A; IB = -1m A -850 m V IC = -50 m A; IB = -5 m A − -950 m V 10 pF 4.5 pFC c collector capacitance IE = ie = 0; VC B = -5 V ; f= 1 M H z − C e em itter capacitance IC = ic = 0; VEB = -500 m V ; f= 1 M H z fT transition frequency IC = 10 m A; VC E = -20 V ; f= 100 M H z 250 − M H z F noise Þgure IC = 100 µA; VC E = -5 V; R S = 1 kΩ ; f= 10 H z to 15.7 kH z − 4 dB Sw itching tim es (betw een 10% and 90% levels); ton turn-on tim e IC on = -10 m A; IBon = -1 m A; IBoff= 1 m A − 65 ns td delay tim e − 35 ns tr rise tim e − 35 ns toff turn-off tim e − 300 ns ts storage tim e − 225 ns tf fall tim e − 75 ns

RATING CHARACTERISTIC CURVES ( CHT3946UPNPT ) 0.1 0.1 1 10 100 1000 V , BASE-EMITTER (V)BE(SAT) SATURATION VOLTAGE I , COLLECTOR CURRENT (mA)C Fig. 5, Typical Base-Emitter Saturatio nVol tagevs .Collecto rCurren t(NPN-CH3904) IC IB =1 0 0.01 0.1 0.1 1 10 100 1000 V , COLLECTOR-EMITTER (V)CE(SAT) SATURATION VOLTAGE I , COLLECTOR CURRENT (mA)C Fig. 4, Typical Collector-Emitter Saturatio nVol tagevs .Collecto rCurren t(NPN-CH3904) IC IB =1 0 1000 100 0.1 1 10 1000100 h , DC CURRENT GAINFE I , COLLECTOR CURRENT (mA)C Fig. 3, Typical DC Current Gain vs Collecto rCurren t(NPN-CH3904) T = -25°CA T = +25°CA T = 125°CA V = 1.0VCE 0.1 1 10 100 C , INPUT CAPACITANCE (pF)IBO C , OUTPUT CAPACITANCE (pF)OBO V , COLLECTOR-BASE VOLTAGE (V)CB Fig. 2, Input and Output Capacitance vs. Collector-Bas eVol tage(NPN-CH3904) Cibo Cobo f = 1MHz 100 25 50 75 100 125 150 175 200 P , POWER DISSIPATION (mW)D T , AMBIENT TEMPERATURE (°C)A Fig. 1, Max Power Dissipation vs Ambient Temperature (Total Device) 150 200 250 300 350 100 0.1 1 10 100 C , INPUT CAPACITANCE (pF)IBO C , OUTPUT CAPACITANCE (pF)OBO V , COLLECTOR-BASE VOLTAGE (V)CB Fig. 6, Input and Output Capacitance vs. Collector-Bas eVol tage(NPN-CH3904) f = 1MHz Cibo Cobo

RATING CHARACTERISTIC CURVES ( CHT3946UPNPT) 0.5 0.6 0.7 0.8 0.9 1.0 11 0 1 00 V , BASE-EMITTER (V)BE(SAT) SATURATION VOLTAGE I , COLLECTOR CURRENT (mA)C Fig. 9, Typical Base-Emitter Saturatio nV olt agevs .Collecto rCurren t(PNP-CH3906) IC IB =1 0 0.01 0.1 1 10 100 1000 V , COLLECTOR-EMITTER (V)CE(SAT) SATURATION VOLTAGE I , COLLECTOR CURRENT (mA)C Fig. 8, Typical Collector-Emitter Saturation Voltage vs .Collecto rCurren t(PNP-CH3906) IC IB =1 0 1000 100 0.1 1 10 1000100 h , DC CURRENT GAINFE I , COLLECTOR CURRENT (mA)C Fig. 7, Typical DC Current Gain vs Collecto rCurren t(PNP-CH3906) T = -25°CA T = +25°CA T = 125°CA V = 1.0VCE