CHT32CZPT CHENMKO | Alldatasheet
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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP SILICON Transistor VOLTAGE 100 Volts CURRENT 3 Ampere APPLICATION FEATURE * Suitable for high packing density. CONSTRUCTION * PNP SILICON Transistor * Telephony and proferssional communction equipment. * Other switching applications. 2004-7 * High saturation current capability. CIRCUIT LIM ITIN G VA LU ES In accordance w ith the Absolute M axim um R ating System (IEC 60134). N ote 1. Transistor m ounted on an FR 4 printed-circuit board. SYM B O L PA R A M ETER C O N D ITIO N S M IN . M A X. U N IT VC BO collector-base voltage open em itter − -100 V VC EO collector-em itter voltage open base − -100 V VVEBO em itter-base voltage open collector -5.0 IC collector current (DC) − -3 Ptot total pow er dissipation Tamb ≤ 25 °C; note 1 − 2 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tam b operating am bient tem perature −65 +150 °C * Small flat package. ( SC-73/SOT-223 ) Dimensions in millimeters SC-73/SOT-223 SC-73/SOT-223 0.90+0.05 6.50+0.20 1.65+0.15 0.01~0.10 3.5+0.2 2.0+0.3 7.0+0.3 0.70+0.10 2.30+0.1 4.60+0.1 0.27+0.05 3.00+0.10 2.0+0.3 0.9+0.2 1 23
1 Base
3 Collector ( Heat Sink )
2 Emitter
ICM Peak Collector Current A A-6.0− (1) (2) (3) E C B
Tamb =2 5 °C unless otherwise speciÞed. RATING CHARACTERISTIC CURVES ( CHT32CZPT ) SYMBOL V PARAMETER -1.8 CONDITIONS 100 MIN. MAX. UNIT ICEO collector cut-off current VC E= -60 V − -300 uA IC = -3.0A; VCE = -4V IC = -1.0A; VCE = -4V 25hFE DC current gain − CEsat IEBO collector-emitter satur emitter cut-off current ationV v VEB=-5.0V oltage − -1 mA − -1.2 VBEON base-emitter saturation voltage fT transition frequency IC = -500mA; VCE = 10V ; f = 10 MHz
3.0 MHz
V IC=-3.0A,IB=-375mA IC =- 3.0A; VCE = -4V