CHT3055ZPT CHENMKO | Alldatasheet
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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN SILICON Transistor VOLTAGE 60 Volts CURRENT 6 Ampere APPLICATION FEATURE * Suitable for high packing density. CONSTRUCTION *NPN SILICON Transistor * Telephony and proferssional communction equipment. * Other switching applications. 2004-7 * High saturation current capability. CIRCUIT LIM ITIN G VA LU ES In accordance w ith the Absolute M axim um R ating System (IEC 60134). N ote 1. Transistor m ounted on an FR 4 printed-circuit board. SYM B O L PA R A M ETER C O N D ITIO N S M IN . M A X. U N IT VC BO collector-base voltage open em itter − 100 V VC EO collector-em itter voltage open base − 60 V VVEBO em itter-base voltage open collector 7.0 IC collector current (DC) − 6.0 Ptot total pow er dissipation Tamb ≤ 25 °C; note 1 − 2 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tam b operating am bient tem perature −65 +150 °C * Small flat package. ( SC-73/SOT-223 ) Dimensions in millimeters SC-73/SOT-223 SC-73/SOT-223 0.90+0.05 6.50+0.20 1.65+0.15 0.01~0.10 3.5+0.2 2.0+0.3 7.0+0.3 0.70+0.10 2.30+0.1 4.60+0.1 0.27+0.05 3.00+0.10 2.0+0.3 0.9+0.2 1 23
1 Base
3 Collector ( Heat Sink )
2 Emitter
A A3.0− (1) (2) (3) E C B MARKING * ZDN
Tamb =2 5 °C unless otherwise speciÞed. RATING CHARACTERISTIC CURVES ( CHT3055ZPT ) SYMBOL V PARAMETER 1.5 CONDITIONS MIN. MAX. UNIT ICEO collector cut-off current VC E=30 V − 700 uA IC =6.0A; VCE = 4V IC = 4.0A; VCE = 4V 20hFE DC current gain CEsat IEBO collector-emitter satur emitter cut-off current ationV v VEB=7.0V oltage − 5.0 mA − 1.1 VBEON base-emitter saturation voltage fT transition frequency IC = 500mA; VCE = 10V ; f = 1.0MHz
2.5 MHz
V 5.0 IC=4.0A,IB=400mA IC = 4.0A; VCE = 4V