CHT2907APT CHENMKO | Alldatasheet

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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Switching Transistor VOLTAGE 60 Volts CURRENT 0.6 Ampere APPLICATION FEATURE * Small surface mounting type. (SOT-23) * High current (Max.=600mA). * Suitable for high packing density. CONSTRUCTION * PNP Switching Transistor * Telephony and proferssional communction equipment. * Other switching applications. 2002-7 * Low voltage (Max.=60V) . * High saturation current capability. * Voltage controlled small signal switch. CIRCUIT MARKING * 2F- E C B LIM ITIN G VA LU ES In accordance w ith the Absolute M axim um R ating System (IEC 60134). N ote 1. Transistor m ounted on an FR 4 printed-circuit board. SYM B O L PA R A M ETER C O N D ITIO N S M IN . M A X. U N IT VC BO collector-base voltage open em itter − -60 V VC EO collector-em itter voltage open base − -60 V VVEBO em itter-base voltage open collector − -5 IC collector current(D C ) − -600 m A IC M peak collector current − -800 m A IBM peak base current − -200 m A Ptot total pow er dissipation Tam b ≤ 25 °C ; note 1 − 350 m W Tstg storage tem perature −65 +150 °C Tj junction tem perature − 150 °C Tam b operating am bient tem perature −65 +150 °C SOT-23 (1) (2) (3) .119 (3.04) .007 (0.177) .002 (0.05) .110 (2.80) .103 (2.64) .028 (0.70) .020 (0.50) .055 (1.40) .047 (1.20) .045 (1.15) .033 (0.85) .086 (2.20) .082 (2.10) .041 (1.05) .019 (0.50) .018 (0.30) .033 (0.85) .066 (1.70) (1) (2) (3) Dimensions in inches and (millimeters) SOT-23

TH ER M A L C H A R AC TER ISTIC S N ote 1. Transistor m ounted on an FR 4 printed-circuit board. C H A R AC TER ISTIC S Tam b = 25 °C unless otherw ise speciÞed. N ote 1. Pulse test: tp ≤ 300 µs;δ ≤ 0.02. SYM B O L PA R A M ETER C O N D ITIO N S VA LU E U N IT R th j-a therm al resistance from junction to am bient note 1 357 K/W SYM B O L PA R A M ETER C O N D ITIO N S M IN . M A X. U N IT IC BO collector cut-off current IE = 0; VC B = -60 V − -10 nA IEBO IC = 0; VC B = -60 V; Tj = 125 O C − -10 uA em itter cut-off current IC = 0; VEB = 5 V − -10 nA IC = -1.0 m A; VC E = -10V IC = -10 m A; VC E =- 10V 75 hFE D C current gain IC = -0.1 m A; VC E = -10V; note 1 35 IC = -10 m A; VC E = -10V;Ta = -55O C 35 − IC = -150 m A; VC E = -10V 100 300 IC = -150 m A; VC E = -1.0V 50 − IC = -500 m A; VC E = -10V 40 − VC Esat collector-em itter saturation voltage IC = -150 m A; IB = -15 m A − -400 m V IC = -500 m A; IB = -50 m A − -1.6 V VBEsat base-em itter saturation voltage IC = -150 m A; IB = -15 m A -0.6 -1.3 V IC = -500 m A; IB = -50 m A − -2.6 V C c collector capacitance IE = ie = 0; VC B = -5 V; f= 1 M H z − 8 C e em itter capacitance IC = ic = 0; VBE = -500 m V; f= 1 M H z − 30 pF pF fT transition frequency IC = -20 m A; VC E = -20 V; f= 100 M H z 200 − M H z F noise figure IC = 100 µA; VC E = -5 V; R S = 1 kΩ ; f= 1.0 kH z − 4 dB Sw itching tim es (betw een 10% and 90% levels); ton turn-on tim e IC on = -150 m A; IBon = -15m A; IBoff= −15 m A − 35 ns td delay tim e − 10 ns tr rise tim e − 40 ns toff turn-off tim e − 100 ns ts storage tim e − 80 ns tf fall tim e − 30 ns RATING CHARACTERISTIC CURVES ( CHT2907APT )

RATING CHARACTERISTIC CURVES ( CHT2907APT ) Collector-base capacitance CCB = f (VCB) f = 1MHz pF 10 10 V C C B cb 5 5 5-1 0 1 2 100 V Total power dissipation Ptot = f (TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 120 150 180 210 240 270 300 mW 360 Ptot Transition frequency fT = f (IC) VCE = 5V M H z 10 10 m A f C T 5 5 5 Ι 0 1 2 3 101 Permissible pulse load Ptotmax / PtotDC = f (tp) 10-6 010 D = 101 102 310 10-5 10-4 10-3 10-2 100s 0.005 0.01 0.02 0.05 0.1 0.2 0.5 totm ax totP D C P pt tp =D T tp T

RATING CHARACTERISTIC CURVES ( CHT2907APT ) Delay time td = f (IC) Rise time tr = f (IC) 10 m A t C r 101 10 100 1 2 Ι 5 5 ns BEV td, = 0 V 3105 td tr , = 10 VC CV , C C= 20 VBEV V, = 30 V Saturation voltage IC = f (VBEsat, VCEsat) hFE = 10 0 V BE sat C 10-1 100 Ι V m A C E satV, 102 V BEV C E 10-2 Storage time tstg = f (IC) 10 m A t C stg 101 10 100 1 2 Ι 5 5 ns FEh = 10 3105 FE = 20h Fall time tf = f (IC) 10 m A t C f 101 10 100 1 2 Ι 5 5 ns FEh = 10 3105 FE = 20h VC C = 30 V

RATING CHARACTERISTIC CURVES ( CHT2907APT ) DC current gain hFE = f (IC) VCE = 5V 10 m A h C FE 101 10 10 10-1 0 1 2 3 Ι -50 O C

25 O C

150 O C

RATING CHARACTERISTIC CURVES ( CHT2907APT ) Test circuits Delay and rise time 200ohmS -30 V O sc. < 5 nstr ns200 = 50ohmS < 2ns Input r Z t -16 V 1 k 50ohmS Storage and fall time 37ohmS -30 +15 V k V V < 2 ns = 50ohmS Input t Z r 200 ns 1 k 50ohmS O sc. < 5 nstr Oscillograph: R > 100ohmS , C < 12pF, tr < 5ns