CHT2301WPT CHENMKO | Alldatasheet
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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 2 0 Volts CURRENT 2.3 Ampere APPLICATION FEATURE * High density cell design for low RDS(ON). * Suitable for high packing density. CONSTRUCTION * P-Channel Enhancement * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. 2004-8 * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. CIRCUIT Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter CHT2301WPT Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±8 V ID Maximum Drain Current - Continuous A - Pulsed PD Maximum Power Dissipation 1250 mW TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 85 -2.3 MARKING Drain-Source Diose Forward Current A-1.6IS °C/W (Note 1) (Note 2) (Note 1) (Note 1) Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% * 21 S D G -10 * Small surface mounting type. (SC-70/SOT-323) SC-70/SOT-323 Dimensions in millimeters SC-70/SOT-323 (1) (2) (3) 0.65 0.65 1.3±0.1 2.0±0.2 0.8~1.1 0.3±0.1 0.05~0.2 0~0.1 1.25±0.1 2.0~2.45 0.1Min.
RATING CHARACTERISTIC CURVES ( CHT2301WPT ) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS 130 ON CHARACTERISTICS VSD Diose Forward Voltage VDS = 0V, IS = -1.0 A 1.0 V RDS(ON) Static Drain-Source On-Resistance mΩ VGS=-4.5V, ID=-2.8 A SWITCHING CHARACTERISTICS Qgs Gate-Source Charge 1.06 nC Qgd Gate-Drain Charge ton Turn-On Time nS VDD = -10V ID = -1.0A, VGEN = -4.5 V tr Rise Time 36 BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA nA -20 V nA I GSS DSS GSS Zero Gate Voltage Drain Current I V I DS Gate-Body Leakage Gate-Body Leakage -16 V, V V GS GS 8 V, = 0 V VDS µ = 0 V A +100 -100VGS = -8 V, VDS = 0 V 190 VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.6 V VGS=-2.5V, ID=-2.0A tf Fall Time 34 Qg Total Gate Charge 4.32 0.84 VDS=-10V, ID=-1A VGS=-4.5V Turn-Off Timetoff RL= 10 , RGEN= 10Ω Ω (Note 2) (Note 3) Note : 3. Guaranteed by design , not subject to production trsting