CHT210PPT CHENMKO | Alldatasheet

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CHENMKO ENTERPRISE CO.,LTD SMALL FLAT PNP Epitaxial Transistor VOLTAGE 25 Volts CURRENT 5 Ampere FEATURE * Small flat package. (DPAK) * Low saturation voltage V CE(sat) =-0.3V(max.)(I C=-500mA) CONSTRUCTION * PNP Switching Transistor 2006-1 * High saturation current capability. CIRCUIT E C B THERMAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) NOTES : CHARACTERISTICS CONDITION SYMBOL UNITS 357 oC / WThermal Resistance (Junction to Ambient) Note 1 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS CONDITION Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Open Emitter Open Base Open Collector Collector Current DC Peak Collector Current Peak Base Current Total Power Dissipation TA ≤ 25OC Storage Temperature Junction Temperature SYMBOL VCBO VCEO VEBO IBM R JA TJ TSTG ICM IC MIN. MAX. UNITS - -40 Volts Volts Volts Amps Amps Amps mW oC oC - -25 - -8 - -5 - -10 - -1.0 - 1400 -55 +150 - +150 VALUE PTOT 2. Measured at Pulse Width 300 us, Duty Cycle 2%. (2) (1) (3) .024 (0.60) .035 (0.90) DPAK DPAKDimensions in inches and (millimeters) .094 (2.38) .086 (2.19) .022 (0.55) .018 (0.45) .030 (0.77) .050 (1.27) .020 (0.51) .050 (1.27) .023 (0.58) .018 (0.46) .020 (0.51) .268 (6.80) .252 (6.40) .228(5..80) .217 (5.40) .110 (2.80) .087 (2.20) .028 (0.70) .019 (0.50) .394 (10.00) .354 (9.00)

1 Base

3 Collector ( Heat Sink )

2 Emitter

(1) (3) (2) .181 (4.60)

RATING CHARACTERISTIC CURVES ( CHT210PPT ) CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain IE=0; VCB=-40V IC=0; VEB=-8V VCE=-1V; Note 1 IC=-500mA IC=-2.0A Collector-Emitter Saturation Voltage IC=-500mA; IB=-50mA Base-Emitter Saturatio Voltage IC=-5A; IB=-1A IE=ie=0; VCB=-10V; f=0.1MHz IC=-0.1A; VCE=-10V; f=100MHz Collector Capacitance Transition Frequency SYMBOL ICBO IEBO hFE CC VBEsat VCEsat MIN. MAX.TYPE UNITS - -0.1 uA uA Volts Volts pF - -0.1- 180 - -0.75 - -2.5 Note : 1. Pulse test: tp ≤ 300uSec; δ≤0.02. fT MHz 120 IC=-5.0A; 10 VCE=-2V IC=-2A; IB=-200mA IC=-5A; IB=-1A - -0.3 - -1.8