CHT127ZPT CHENMKO | Alldatasheet
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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP SILICON Transistor VOLTAGE 100 Volts CURRENT 5 Ampere APPLICATION FEATURE * Suitable for high packing density. CONSTRUCTION * PNP SILICON Transistor * Telephony and proferssional communction equipment. * Other switching applications. 2004-7 * High saturation current capability. CIRCUIT LIM ITIN G VA LU ES In accordance w ith the Absolute M axim um R ating System (IEC 60134). N ote 1. Transistor m ounted on an FR 4 printed-circuit board. SYM B O L PA R A M ETER C O N D ITIO N S M IN . M A X. U N IT VC BO collector-base voltage open em itter − -100 V VC EO collector-em itter voltage open base − -100 V VVEBO em itter-base voltage open collector -5.0 IC collector current (DC) − -5.0 A Ptot total pow er dissipation Tamb ≤ 25 °C; note 1 − 2 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tam b operating am bient tem perature −65 +150 °C * Small flat package. ( SC-73/SOT-223 ) Dimensions in millimeters SC-73/SOT-223 SC-73/SOT-223 0.90+0.05 6.50+0.20 1.65+0.15 0.01~0.10 3.5+0.2 2.0+0.3 7.0+0.3 0.70+0.10 2.30+0.1 4.60+0.1 0.27+0.05 3.00+0.10 2.0+0.3 0.9+0.2 1 23
1 Base
3 Collector ( Heat Sink )
2 Emitter
ICM Peak Collector Current A-8.0− (1) (2) (3) E C B MARKING * ZBP
Tamb =2 5 °C unless otherwise speciÞed. RATING CHARACTERISTIC CURVES ( CHT127ZPT ) = -3V IC =--3.0A; VCE=-3.0V IC =--5.0A; IB = -20 mA SYMBOL V PARAMETER -2.5 CONDITIONS MIN. MAX. UNIT ICEO collector cut-off current VCE = -50 V − -500 uA IC = -3.0A; VCE = -3V 1000 hFE DC current gain I C = -500 mA; VCE 1000 − CEsat IEBO collector-emitter satur emitter cut-off current ationV v VEB=-5.0V oltage I -2.0 C mA − -4.0 V VBEON base-emitter saturation voltage C ob collector capacitance IE =ie = 0; VCB =-10V ; f=1M H z 3 00 pF fT transition frequency IC = -3.0A; VCE = -4V ; f = 1.0 MHz
4.0 MHz
V ICBO collector cut-off current VCB = -100 V − -200 uA