CHT100PT CHENMKO | Alldatasheet
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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 3 0 Volts CURRENT 1.1 Ampere APPLICATION FEATURE * Small surface mounting type. (SC-59/SOT-346) * High density cell design for low RDS(ON). * Suitable for high packing density. CONSTRUCTION * N-Channel Enhancement * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. 2004-03 * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. CIRCUIT MARKING S D G Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter CHT100PT Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage - Continuous ±20 V ID Maximum Drain Current - Continuous 1.1 A - Pulsed 4.4 PD Maximum Power Dissipation 500 mW TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 250 K/W ± A T100* SC-59/SOT-346 (1) (2) (3) Dimensions in millimeters 0.95 0.95 1.7~2.1 2.7~3.1 0.89~1.3 0.3~0.51 0.085~0.2 0~0.1 1.2~1.9 2.1~2.95 0.3~0.6 SC-59/SOT-346
RATING CHARACTERISTIC CURVES ( CHT100PT ) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA TC=125°C 10 IGSSF Gate - Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -12 V, VDS = 0 V -100 nA ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS = 10V, ID = 1.0 µA 1 3.0 V RDS(ON) Static Drain-Source On-Resistance Ω VGS = 4.5 V, ID = 0.5 A 0.17 VGS = 10 V, ID = 1.0 A 0.24 gFS Forward Transconductance S VDS = 10 V , ID = 500 m A 1.3 DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = 10 V, VGS = 0 V, f = 1.0 MHz 150 Coss Output Capacitance 90 pF Crss Reverse Transfer Capacitance 30 Qg Total Gate Charge VDS D = 24 V, VGS = 10 V, I = 1.0 A 5.5 Qgs Gate-Source Charge 0.8 nC Qgd Gate-Drain Charge 1.3 ton Turn-On Time nSVDD = 10 V ID = 500 mA, VGS = 5.0 V, RGEN = 50 Ω toff tr tf Turn-Off Time nSVDD = 10 V ID = 500 mA, VGS = 5.0 V, RGEN = 50 Ω DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current 540 mA ISM Maximum Pulsed Drain-Source Diode Forward Current 4.0 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IF = 1.0 A 1.2 V µA 2.4
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation