CHT06UPNPT

CHT06UPNPT CHENMKO | Alldatasheet

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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN/PNP Silicon AF Transistor Array VOLTAGE 80 Volts CURRENT 0.5 Ampere 2002-7 CIRCUIT LIM ITIN G VA LU ES In accordance w ith the Absolute M axim um R ating System (IEC 60134). N ote 1. Transistor m ounted on an FR 4 printed-circuit board. SYM B O L PA R A M ETER C O N D ITIO N S M IN . M A X. U N IT VC BO collector-base voltage open em itter − 80 V VC EO collector-em itter voltage open base − 80 V VEBO em itter-base voltage open collector − 4 V IC collector current(D C ) − 500 m A IC M peak collector current − 1000 m A IBM peak base current − 200 m A Ptot total pow er dissipation Tam b ≤ 25 °C ; note 1 − 330 m W Tstg storage tem perature −65 +150 °C Tj junction tem perature − 150 °C Tam b operating am bient tem perature −65 +150 °C 6 5 4 321 C 1 B2 E2 C 2B1E1 TR 1 TR 2 SC-74/SOT-457 APPLICATION FEATURE * Small surface mounting type. (SC-74/SOT-457) * High current gain. * Suitable for high packing density. CONSTRUCTION * NPN/PNP transistor in one package. * AF input stages and driver applicationon equipment. * Other switching applications. * Low colloector-emitter saturation. * High saturation current capability. * Two internal isolated NPN/PNP transistor in one package. Dimensions in millimeters SC-74/SOT-457 0.935~1.30.08~0.2 0~0.15 2.6~3.0 0.3~0.6 0.95 0.95 1.7~2.1 2.7~3.1 0.25~0.5 1.4~1.8 (1) (6) (4)(3)

TH ER M A L C H A R AC TER ISTIC S N ote 1. Transistor m ounted on an FR 4 printed-circuit board. C H A R AC TER ISTIC S Tam b = 25 °C unless otherw ise speciÞed. N ote 1. Pulse test: tp ≤ 300 µs;δ ≤ 0.02. SYM B O L PA R A M ETER C O N D ITIO N S VA LU E U N IT R th j-s therm al resistance from junction to soldering point note 1 105 K/W SYM B O L PA R A M ETER C O N D ITIO N S M IN . M A X. U N IT IC BO collector cut-off current IE = 0; VC B = 80 V − 100 nA IC EO IC = 0; VC B = 80 V; TA = 150 O C − 20 uA em itter cut-off current IC = 0; VC E = 60 V − 100 nA IC = 100 m A; VC E = 1.0V 100 hFE D C current gain IC = 10 m A; VC E = 1.0V; note 1 100 VC Esat collector-em itter saturation voltage IC = 100 m A; IB = 10 m A − 250 m V VBE(O N ) base-em itter saturation voltage IC = 100 m A; VC E = 1 V − 1.2 V C c collector capacitance IE = ie = 0; VC B = 10V ; f= 1 M H z − 12 C e em itter capacitance IC = ic = 0; VBE = 500 m V; f= 1 M H z − 120 pF pF fT transition frequency IC = 20 m A; VC E = 5 V ; f= 100 M H z 100 − M H z F noise figure IC = 100 µA; VC E = 5 V ; R S = 1 kΩ ; f= 1.0 kH z − 4 dB RATING CHARACTERISTIC CURVES ( CHT06UPNPT )

RATING CHARACTERISTIC CURVES ( CHT06UPNPT ) Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 010 C EsatV 0.4 V 0.8 100 101 310 ΙC m A 210 0.2 0.6 oC-50 25 oC 150 oC Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 010 BEsatV 2.0 V 4.0 100 101 310 ΙC m A 210 1.0 3.0 oC-50 25 oC oC150 Transition frequency fT = f (IC) VCE = 5V 100 10m A 110 310 101 102 3 102 C Tf M H z Ι DC current gain hFE = f (IC) VCE = 5V 10-1 310m A 010 310 100 101 101 C FEh Ι 210 210 ûC1005 25 ûC -50 ûC

RATING CHARACTERISTIC CURVES ( CHT06UPNPT ) Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 0 V BEsat 1.5 C 10-1 0.5 1.0 100 Ι V m A 102 100 oC 25 oC -50 oC Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 0.010 C EsatV 310 ΙC m A 110 210 oC 100 25 oC -50 oC DC current gain hFE = f (IC) VCE = 1V h C FE 101 10-1 0 Ι 100 oC 25 oC -50 oC 110 210 310m A 210 310 010 Collector current IC = f (VBE) VCE = 1V 0 V BE 1.5 C 10-1 0.5 1.0 100 Ι V m A 102 100 oC 25 oC -50 oC

RATING CHARACTERISTIC CURVES ( CHT06UPNPT ) Transition frequency fT = f (IC) VCE = 5V 100 310m A 110 310 101 102 102 C Tf M H z Ι 5 5