CHT05N1PT CHENMKO | Alldatasheet
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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN General Purpose Transistor - VOLTAGE 60 Volts CURRENT 0.5 Ampere APPLICATION FEATURE * Small surface mounting type. (FBPT-923) * Low current (Max.=500mA). * Suitable for high packing density. CONSTRUCTION * NPN General Purpose Transistor * General purpose applications. 2006-07 * Low voltage (Max.=60V) . * High saturation current capability. CIRCUIT E C B LIM ITIN G VA LU ES In accordance w ith the Absolute M axim um R ating System (IEC 60134). N ote 1. Transistor m ounted on an FR 4 printed-circuit board. SYM B O L PA R A M ETER C O N D ITIO N S M IN . M A X. U N IT VC BO collector-base voltage open em itter − 60 V VC EO collector-em itter voltage open base − 60 V VVEBO em itter-base voltage open collector − 6 IC collector currentD C − 500 m A IC M peak collector current − 500 m A IBM peak base current − 100 m A Ptot total pow er dissipation Tam b ≤ 25 °C ; note 1 − 100 mW Tstg storage tem perature −55 +150 °C Tj junction tem perature − +150 °C Tam b operating am bient tem perature −55 +150 °C (1) (2) (3) 1.0±0.05 0.5±0.05 0.05±0.04 0.68±0.05 0.26±0.05 0.42±0.05 0.3±0.05 0.25(REF.) 0.37(REF.) Dimensions in millimeters 1.0±0.05 FBPT-923 FBPT-923
RATING CHARACTERISTIC CURVES ( CHT05N1PT ) TH ER M A L C H A R AC TER ISTIC S N ote 1. Transistor m ounted on an FR 4 printed-circuit board. C H A R AC TER ISTIC S Tam b = 25 °C unless otherw ise speciÞed. N ote 1. Pulse test: tp ≤ 300 µs;δ ≤ 0.02. SYM B O L PA R A M ETER C O N D ITIO N S VA LU E U N IT R th j-a therm al resistance from junction to am bient note 1 357 K/W SYM B O L PA R A M ETER C O N D ITIO N S M IN . M A X. U N IT IC BO collector cut-off current IE = 0; VC B = 60 V − 0.1 uA IEBO em itter cut-off current IC = 0; VEB = 4 V − 0.1 uA hFE D C current gain VC E = 1.0 V; note 1 IC = 10 m A 100 − IC = 100 m A 100 − VC Esat collector-em itter saturation voltage IC = 100 m A; IB =10 m A − 0.25 V VBEon base-emitter voltage IC = 100 mA; VCE = 1.0 V 1.2 V C cb collector-base capacitance IE = ie = 0; VC B =10V ; f= 1 M H z − 10 pF fT transition frequency IC = 100 m A; VC E =1.0 V ; f= 100 M H z 80 − M H z