CHRT5993TPT CHENMKO | Alldatasheet
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(1) CHRT5993TPT (2) CHENMKO ENTERPRISE CO.,LTD (3) SURFACE MOUNT NPN Silicon RF Transistor VOLTAGE 11 Volts CURRENT 50 mAmpere FEATURE * Small surface mounting type. (SOT-416/SC-75) CONSTRUCTION * NPN RF Transistor * High Transition frquency. CIRCUIT E C B LIM ITIN G VA LU ES In accordance w ith the Absolute M axim um R ating System (IEC 60134). WCollector power dissipationC 0.15 2007-05Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter − 20 V V CEO collector-emitter voltage open base − 11 V VVEBO emitter-base voltage open collector − 3 IC collector current (DC) − 50 mA P − Tstg storage temperature −50 +150 °C Tj junction temperature − 150 °C APPLICATION * UHF Converter * Local Oscillator Dimensions in millimeters SC-75/SOT-416 (1) (2) (3) 0.5 0.6~0.9 0.3± 0.15±0.05 0.8±0.1 1.6±0.2 0.1Min. 0.2±0.10.05 SC-75/SOT-416 0~0.1
RATING CHARACTERISTIC CURVES ( CHRT5993TPT ) CHARA CTERISTICS Tamb =2 5 °C unless otherwise speciÞed. Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 20 - - V IC= 10uA, IE= 0A Collector-emitter breakdown voltage BVCEO 11 - - V IC= 1mA, IB= 0A Emitter-base breakdown voltage BVEBO 3 - - V IE= 10uA, IC= 0A Collector cut-off current ICBO - - 0.5 uA VCB= 10V, IE= 0A Emitter cut-off current IEBO - - 0.5 uA VEB= 2V, IE= 0A DC current gain hFE 56 - 180 - VCE= 10V, IC= 5mA Collector-emitter saturation voltage VCE(sat) - - 0.5 V IC= 10mA, IB= 5mA Transition frequency f T 1400 3200 - MHz VCE= 10V, IE= -10mA Collector output capacitance Cob - 0.8 1.5 pF VCB= 10V, f = 1MHz, IE= 0A Characteristic Conditions