CHM8030LANPT CHENMKO | Alldatasheet
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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 75 Ampere APPLICATION FEATURE * High density cell design for extremely low R DS(ON) . CONSTRUCTION * N-Channel Enhancement * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. 2006-01 * Rugged and reliable. CIRCUIT Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter CHM8030LANPT Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Maximum Drain Current - Continuous A - Pulsed PD Maximum Power Dissipation 75 W TSTG Storage Temperature Range -55 to 150 °C Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W (Note 3) Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 225 * Small flat package. (D2PAK) TJ Operating Temperature Range -55 to 150 °C 3. Repetitive Rating , Pulse width linited by maximum junction temperature (Note 1) 4. Guaranteed by design , not subject to production trsting S D G(1) (2) (3) D2PAK D2PAKDimensions in inches and (millimeters) 0.420(10.67) 0.380(9.69) 0.360(9.14) 0.625(15.88) 0.575(14.60) 0.320(8.13) 0.245(6.22) 0.190(4.83) 0.055(1.40) 0.045(1.14) 0.055(1.40) 0.047(1.19) 0.025(0.64) 0.110(2.79) 0.090(2.29) 0.018(0.46) 0.110(2.79) 0.080(2.03) 0.160(4.06) MIN. K 31 2
1 Gate
3 Drain ( Heat Sink )
2 Source
RATING CHARACTERISTIC CURVES ( CHM8030LANPT ) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS 6.5 ON CHARACTERISTICS gFS Forward Transconductance VDS =10V, ID = 26A RDS(ON) Static Drain-Source On-Resistance mΩVGS=10V, ID=37.5A SWITCHING CHARACTERISTICS Qgs Gate-Source Charge Qgd Gate-Drain Charge ton Turn-On Time nS VDD = 15V ID = 60A, VGS = 10 V tr Rise Time 45 BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA nA 30 V nA I GSSF DSS S Zero Gate Voltage Drain Current I VDS Gate-Body Leakage Gate-Body Leakage 30 V, V V GS GS 20V, = 0 V VDS µ = 0 V A +100 -100VGS = -20V, VDS = 0 V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 V 100 tf Fall Time 33 Qg Total Gate Charge VDS=15V, ID=40A VGS=5V Turn-Off Timetoff RGEN= 6Ω (Note 2) (Note 4) 40 S nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I VSD Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage IS = 37.5A, VGS = 0 V 1.3 A V (Note 1) (Note 2) 5.5 I GSSR