CHM6861ZPT CHENMKO | Alldatasheet
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-3.5 CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 6 0 Volts CURRENT 3.5 Ampere APPLICATION FEATURE * High density cell design for extremely low R DS(ON) . CONSTRUCTION * P-Channel Enhancement * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. °C/W 2007-04 (Note 3) * Rugged and reliable. Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% CIRCUIT Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter CHM6861ZPT Units VDSS Drain-Source Voltage -60 V S D G V GSS Gate-Source Voltage -14 ±20 V ID Maximum Drain Current - Continuous A - Pulsed PD Maximum Dimensions in millimeters Power Dissipation 3000 SC-73/SOT-223 mW SC-73/SOT-223 TSTG Storage Temperature Range -55 to 150 °C Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 42 0.90+0.05 6.50+0.20 1.65+0.15 0.01~0.10 3.5+0.2 2.0+0.3 7.0+0.3 0.70+0.10 2.30+0.1 4.60+0.1 0.27+0.05 3.00+0.10 2.0+0.3 0.9+0.2 1 23
1 Gate
3 Drain ( Heat Sink )
2 Source
- Small flat package. ( SC-73/SOT-223 ) TJ Operating Temperature Range -55 to 150 °C 3. Repetitive Rating , Pulse width linited by maximum junction temperature (Note 1) 4. Guaranteed by design , not subject to production trsting
RATING CHARACTERISTIC CURVES ( CHM6861ZPT ) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage 130 V ON CHARACTERISTICS GS g = 0 V, ID FS Forward Transconductance V = -250 µA DS nA -60 = -4.5V V nA , I I D GSSF DSS = -2.8A S Zero Gate Voltage Drain Current I R V DS(ON) DS Static Drain-Source On-Resistance Gate-Body Leakage mΩ VGS=-10V, ID=-3.1A Gate-Body Leakage -60 V, V V GS GS 20V, = 0 V VDS µ = 0 V SWITCHING A CHARACTERISTICS +100 -100VGS = -20V, V Qgs DS Gate-Source Charge = 0 V Qgd Gate-Drain Charge ton 170 Turn-On Time V nS GS V (th) DD Gate Threshold Voltage = -30V V I DS D = -1.0A = V GS V , I G D S = -10 V = -250 µA tr Rise Time 15 -1 V VGS=-4.5V, ID=-2.8A tf Fall Time 25 Qg Total Gate Charge 1.4 VDS=-30V, ID=-3.5A VGS=-10V Turn-Off Timetoff RGEN= 6 Ω (Note 2) (Note 4) 7 S nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS GSSRI VSD Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage IS = -1.3A, VGS = 0 V -3.5 -1.2 A V (Note 1) (Note 2) I 108 140 11 14 2.3