CHM50N06NPT CHENMKO | Alldatasheet
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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 50 Ampere APPLICATION FEATURE * Super high dense cell design for extremely low R DS(ON) . CONSTRUCTION * N-Channel Enhancement * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. 2008-01 * High power and current handing capability. Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter CHM50N06NPT Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Maximum Drain Current - Continuous A - Pulsed PD Maximum Power Dissipation at Tc = 25 131 W TSTG Storage Temperature Range -55 to 150 °C Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W (Note 3) Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 150 * Small package. (D2PAK) TJ Operating Temperature Range -55 to 150 °C 3. Repetitive Rating , Pulse width linited by maximum junction temperature (Note 1) 4. Guaranteed by design , not subject to production trsting CIRCUIT S D G(1) (2) (3) D2PAK D2PAKDimensions in inches and (millimeters) 0.420(10.67) 0.380(9.69) 0.360(9.14) 0.625(15.88) 0.575(14.60) 0.320(8.13) 0.245(6.22) 0.190(4.83) 0.055(1.40) 0.045(1.14) 0.055(1.40) 0.047(1.19) 0.025(0.64) 0.110(2.79) 0.090(2.29) 0.018(0.46) 0.110(2.79) 0.080(2.03) 0.160(4.06) MIN. K 31 2
1 Gate
3 Drain ( Heat Sink )
2 Source
RATING CHARACTERISTIC CURVES ( CHM50N06NPT ) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS ON CHARACTERISTICS gFS Forward Transconductance VDS =10V, ID = 25A RDS(ON) Static Drain-Source On-Resistance SWITCHING CHARACTERISTICS Qgs Gate-Source Charge Qgd Gate-Drain Charge ton Turn-On Time nS VDD = 30V ID = 48A, VGS = 10 V 34.4 tr Rise Time 10 BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA nA 60 V nA I GSSF DSS S Zero Gate Voltage Drain Current I VDS Gate-Body Leakage Gate-Body Leakage 54 V, V V GS GS 20V, = 0 V VDS µ = 0 V A +100 -100VGS = -20V, VDS = 0 V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2 V tf Fall Time 20 Qg Total Gate Charge VDS=48V, ID=48A VGS=10V Turn-Off Timetoff RGEN= 7.5 Ω (Note 2) (Note 4) S nC 17.2 32.5 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS 28.2 I VSD Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage IS = 50A, VGS = 0 V 1.5 A V (Note 1) (Note 2) 8.5 37.5 I GSSR 22 mΩVGS=10V, ID=50A 14 Dynamic Characteristics Input Capacitance Reverse Transfer Capacitance Output Capacitance Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.0 MHz 1420 400 pF