CHM4948JPT CHENMKO | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3.1 Ampere APPLICATION FEATURE * Super high dense cell design for extremely low R DS(ON) . CONSTRUCTION * P-Channel Enhancement * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. 2006-02 * High power and current handing capability. * Lead free product is acquired. CIRCUIT Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter CHM4948JPT Units VDSS Drain-Source Voltage -60 V VGSS Gate-Source Voltage ±20 V ID Maximum Drain Current - Continuous A - Pulsed PD Maximum Power Dissipation 2000 mW TSTG Storage Temperature Range -55 to 150 °C Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 62.5 -3.1 °C/W (Note 3) Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% -20 Dimensions in millimeters SO-8 * Small flat package. (SO-8 ) TJ Operating Temperature Range -55 to 150 °C 3. Repetitive Rating , Pulse width linited by maximum junction temperature (Note 1) 4. Guaranteed by design , not subject to production trsting SO-8 1.27 (0.05)BSC .51 (0.02 0 ) .10 (0.012) .25 (0.010) .17 (0.007) 4.06 (0.160) 3.70 (0.146) 5.00 (0.197) 4.69 (0.185) 1.75 (0.069) 1.35 (0.053) 6.20 (0.244) 5.80 (0.228) .25 (0.010) .05 (0.002) S1 S2 D1D1 G1 G2 D2D2
RATING CHARACTERISTIC CURVES ( CHM4948JPT ) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS 120 ON CHARACTERISTICS gFS Forward Transconductance VDS = -15V, ID = -3.1A RDS(ON) Static Drain-Source On-Resistance mΩ VGS=-10V, ID=-3.1A SWITCHING CHARACTERISTICS Qgs Gate-Source Charge Qgd Gate-Drain Charge ton Turn-On Time nS VDD = -30V ID = -1.0A, VGS = -10 V tr Rise Time 30 BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA nA -60 V nA IDSS S Zero Gate Voltage Drain Current I VDS Gate-Body Leakage Gate-Body Leakage -60 V, V V GS GS 20V, = 0 V VDS µ = 0 V A +100 -100VGS = -20V, VDS = 0 V VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -1 V VGS=-4.5V, ID=-2.8A 150 tf Fall Time 75 Qg Total Gate Charge VDS=-30V, ID=-3.1A VGS=-10V Turn-Off Timetoff RGEN= 6 Ω (Note 2) (Note 4) nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage IS = -2.0A, VGS = 0 V -2.0 -1.2 A V (Note 1) (Note 2) 150 120 GSSF I I GSSR 7 S