CHM4800AJPT CHENMKO | Alldatasheet
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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 9 Ampere APPLICATION FEATURE * Super high dense cell design for extremely low R DS(ON) . CONSTRUCTION * N-Channel Enhancement * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. 2006-02 * High power and current handing capability. * Lead free product is acquired. CIRCUIT Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter CHM4800AJPT Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Maximum Drain Current - Continuous A - Pulsed PD Maximum Power Dissipation 2500 mW TSTG Storage Temperature Range -55 to 150 °C Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 50 °C/W (Note 3) Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% Dimensions in millimeters SO-8 * Small flat package. (SO-8 ) TJ Operating Temperature Range -55 to 150 °C 3. Repetitive Rating , Pulse width linited by maximum junction temperature (Note 1) 4. Guaranteed by design , not subject to production trsting SO-8 1.27 (0.05)BSC .51 (0.02 0 ) .10 (0.012) .25 (0.010) .17 (0.007) 4.06 (0.160) 3.70 (0.146) 5.00 (0.197) 4.69 (0.185) 1.75 (0.069) 1.35 (0.053) 6.20 (0.244) 5.80 (0.228) .25 (0.010) .05 (0.002) S S S G DD D D
RATING CHARACTERISTIC CURVES ( CHM4800AJPT ) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS ON CHARACTERISTICS gFS Forward Transconductance VDS =15V, ID = 9A RDS(ON) Static Drain-Source On-Resistance mΩ VGS=10V, ID=9A SWITCHING CHARACTERISTICS Qgs Gate-Source Charge Qgd Gate-Drain Charge ton Turn-On Time nS VDD = 15V ID = 1.0A, VGS = 10 V tr Rise Time 5 BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA nA 30 V nA I GSSF DSS S Zero Gate Voltage Drain Current I VDS Gate-Body Leakage Gate-Body Leakage 24 V, V V GS GS 20V, = 0 V VDS µ = 0 V A +100 -100VGS = -20V, VDS = 0 V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 V VGS=4.5V, ID=7A tf Fall Time 9 Qg Total Gate Charge 4.2 VDS=15V, ID=9A VGS=5V Turn-Off Timetoff RGEN= 6 Ω (Note 2) (Note 4) nC 2.6 41.2 5.1 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS 13.7 I VSD Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage IS = 2.3A, VGS = 0 V 2.3 1.2 A V (Note 1) (Note 2) 13.5 3.7 I GSSR S