CHM4435AJPT CHENMKO | Alldatasheet
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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 8 Ampere APPLICATION FEATURE * High density cell design for extremely low R DS(ON) . CONSTRUCTION * P-Channel Enhancement * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. 2005-02 * Rugged and reliable. * High saturation current capability. CIRCUIT Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter CHM4435AJPT Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V ID Maximum Drain Current - Continuous A - Pulsed PD Maximum Power Dissipation 2500 mW TSTG Storage Temperature Range -55 to 150 °C Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 50 °C/W (Note 3) Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% -50 Dimensions in millimeters SO-8 * Small flat package. (SO-8 ) TJ Operating Temperature Range -55 to 150 °C 3. Repetitive Rating , Pulse width linited by maximum junction temperature (Note 1) 4. Guaranteed by design , not subject to production trsting SO-8 1.27 (0.05)BSC .51 (0.02 0 ) .10 (0.012) .25 (0.010) .17 (0.007) 4.06 (0.160) 3.70 (0.146) 5.00 (0.197) 4.69 (0.185) 1.75 (0.069) 1.35 (0.053) 6.20 (0.244) 5.80 (0.228) .25 (0.010) .05 (0.002) S S S G DD D D
RATING CHARACTERISTIC CURVES ( CHM4435AJPT ) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS ON CHARACTERISTICS gFS Forward Transconductance VDS = -15V, ID = -8A RDS(ON) Static Drain-Source On-Resistance mΩ VGS=-10V, ID=-8A SWITCHING CHARACTERISTICS Qgs Gate-Source Charge Qgd Gate-Drain Charge ton Turn-On Time nS VDD = -15V ID = -1.0A, VGS = -10 V tr Rise Time 18 BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA nA -30 V nA IDSS S Zero Gate Voltage Drain Current I VDS Gate-Body Leakage Gate-Body Leakage -30 V, V V GS GS 20V, = 0 V VDS µ = 0 V A +100 -100VGS = -20V, VDS = 0 V VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -1 V VGS=-4.5V, ID=-5A 140 tf Fall Time 70 Qg Total Gate Charge VDS=-15V, ID=-4.6A VGS=-5V Turn-Off Timetoff RGEN= 6 Ω (Note 2) (Note 4) 13 S nC 110 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS 22 28 VSD Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage IS = -2.1A, VGS = 0 V -2.1 -1.2 A V (Note 1) (Note 2) GSSF I I GSSR