CHM2401JPT CHENMKO | Alldatasheet
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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 6 Ampere APPLICATION FEATURE * Super high dense cell design for extremely low R DS(ON) . CONSTRUCTION * P-Channel Enhancement * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. 2006-02 * High power and current handing capability. * Lead free product is acquired. CIRCUIT Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter CHM2401JPT Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±12 V ID Maximum Drain Current - Continuous A - Pulsed PD Maximum Power Dissipation 2500 mW TSTG Storage Temperature Range -55 to 150 °C Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 50 -6.0 °C/W (Note 3) Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% -20 Dimensions in millimeters SO-8 * Small flat package. (SO-8 ) TJ Operating Temperature Range -55 to 150 °C 3. Repetitive Rating , Pulse width linited by maximum junction temperature (Note 1) 4. Guaranteed by design , not subject to production trsting SO-8 1.27 (0.05)BSC .51 (0.02 0 ) .10 (0.012) .25 (0.010) .17 (0.007) 4.06 (0.160) 3.70 (0.146) 5.00 (0.197) 4.69 (0.185) 1.75 (0.069) 1.35 (0.053) 6.20 (0.244) 5.80 (0.228) .25 (0.010) .05 (0.002) S S S G DD D D
RATING CHARACTERISTIC CURVES ( CHM2401JPT ) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS ON CHARACTERISTICS gFS Forward Transconductance VDS = -5V, ID = -4A RDS(ON) Static Drain-Source On-Resistance mΩ VGS=-4.5V, ID=-4A BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA nA -20 V nA IDSS Zero Gate Voltage Drain Current VDS Gate-Body Leakage Gate-Body Leakage -20 V, V V GS GS 12V, = 0 V VDS µ = 0 V A +100 -100VGS = -12V, VDS = 0 V VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -1 V VGS=-2.5V, ID=-3.2A (Note 2) 10 S GSSF I I GSSR SI SWITCHING CHARACTERISTICS Qgs Gate-Source Charge Qgd Gate-Drain Charge ton Turn-On Time nS VDD = -10V ID = -4A , VGS = -4.5 V 30.4 tr Rise Time 20 150 tf Fall Time 72 Qg Total Gate Charge 3.2 VDS=-10V, ID=-4A VGS=-4.5V Turn-Off Timetoff RGEN= 3 Ω (Note 4) nC 15.2 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS 10.4 VSD Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage IS = -1.0A, VGS = 0 V -6.0 -1.0 A V (Note 1) (Note 2) 1.7 13.8 Dynamic Characteristics Input Capacitance Reverse Transfer Capacitance Output Capacitance Ciss Coss Crss VDS = -10V, VGS = 0V, f = 1.0 MHz 1180 230 145 pF -0.5