CHM2313QPT CHENMKO | Alldatasheet
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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.6 Ampere APPLICATION FEATURE * High density cell design for extremely low R DS(ON) . CONSTRUCTION * P-Channel Enhancement * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. 2006-07 * Rugged and reliable. * High saturation current capability. CIRCUIT Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter CHM2313QPT Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V ID Maximum Drain Current - Continuous A - Pulsed PD Maximum Power Dissipation 2000 mW TSTG Storage Temperature Range -55 to 150 °C Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 62.5 -4.6 °C/W (Note 3) Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% -18.4 * Small flat package. (SC-74/SOT-457) TJ Operating Temperature Range -55 to 150 °C 3. Repetitive Rating , Pulse width linited by maximum junction temperature (Note 1) 4. Guaranteed by design , not subject to production trsting S G D D D D 1 3 6 4 SC-74/SOT-457 Dimensions in millimeters SC-74/SOT-457 0.935~1.30.08~0.2 0~0.15 2.6~3.0 0.3~0.6 0.95 0.95 1.7~2.1 2.7~3.1 0.25~0.5 1.4~1.8 (1) (6) (4)(3)
RATING CHARACTERISTIC CURVES ( CHM2313QPT ) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS ON CHARACTERISTICS gFS Forward Transconductance VDS = -15V, ID = -4.6A RDS(ON) Static Drain-Source On-Resistance mΩ VGS=-10V, ID=-4.6A SWITCHING CHARACTERISTICS Qgs Gate-Source Charge Qgd Gate-Drain Charge ton Turn-On Time nS VDD = -15V ID = -1.0A, VGS = -10 V tr Rise Time 12 BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA nA -30 V nA IDSS S Zero Gate Voltage Drain Current I VDS Gate-Body Leakage Gate-Body Leakage -30 V, V V GS GS 20V, = 0 V VDS µ = 0 V A +100 -100VGS = -20V, VDS = 0 V VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -1 V VGS=-4.5V, ID=-3.6A tf Fall Time 45 Qg Total Gate Charge 3.5 VDS=-15V, ID=-10A VGS=-10V Turn-Off Timetoff RGEN= 6 Ω (Note 2) (Note 4) nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS 17 21 VSD Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage IS = -1.7A, VGS = 0 V -1.7 -1.2 A V (Note 1) (Note 2) GSSF I I GSSR S