CHIMD8PT CHENMKO | Alldatasheet
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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION FEATURE * High current gain. * Suitable for high packing density. * Switching circuit, Inverter, Interface circuit, Driver circuit. * Low colloector-emitter saturation. * High saturation current capability. * Both the CHDTA144T & CHDTC144T in one package. * Built in bias resistor(R1=47kΩ, Typ. ) CIRCUIT CHDTA144T LIMITING V ALUES * Small surface mounting type. (SC-74/SOT-457) SC-74/SOT-457 2004-04 VCEO Collector-Emitter voltage VEBO Emitter-Base voltage −55 ∼ +150 V , Note 1 In accordance with the Absolute Maximum Rating System . Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-Base voltage -50 V -50 V junction - soldering point IC Collector current -100 mA PC Collector Power dissipation Tamb ≤ 25 O C, Note 1 30 0 mW TSTG Storage temperature −55 ∼ +150 O C TJ R θJ-S Thermal resistance Junction temperature O C 140 O C/W 6 4 1 3 Dimensions in millimeters SC-74/SOT-457 0.935~1.30.08~0.2 0~0.15 2.6~3.0 0.3~0.6 0.95 0.95 1.7~2.1 2.7~3.1 0.25~0.5 1.4~1.8 (1) (6) (4)(3)
CHDTA144T CHARA CTERISTICS CHDTC144T CHARA CTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-Base voltage 50 V 50 V junction - soldering point IC(Max.) Collector current 100 mA PD Power dissipation Tamb ≤ 25 O C, Note 1 300 mW TSTG Storage temperature −55 ∼ +150 O C TJ Rθ J-S In accordance with the Absolute Maxim Thermal resistance um Rating System (IEC Junction temperature 60134). O C Note 140 O C/W Transistor mounted on an FR4 printed-circuit board. VCEO Collector-Emitter voltage VEBO Emitter-Base voltage −55 ∼ +150 V , Note 1 V T VCE(sat) amb Collector-Emitter Saturation voltage IC = -5mA; IB= -0.5mA 5 °C unless otherwise speciÞed. Note BV CEO 1.Pulse test: tp≤300uS; δ ≤0.02. Collector-Emitter breakdown voltage SYMBOL BV EBO P Emitter-Base breakdown voltage AR AMETER CONDITIONS -50.0 MIN. -5.0 TYP. MAX. UNIT BV CBO Collector-Base breakdown voltage -0.3 I C = -50uA -50.0 -0.5 IC = -1mA − uA − − 250 V 600 V V IE= -50uA ICBO Collector-Base current VCB = -50V IEBO Emitter-Base current R 1 Input resistor VEB = -4V hFE DC current gain I C = -1mA; VCE = -5.0V − -0.5 100 61.132.9 KΩ uA fT Transition frequency I E=5mA, VCE = -10.0V f=100MHz= − −250 MHz V Tamb =2 5 °C unless otherwise speciÞed. Note 1.Pulse test: tp≤300uS; δ≤0.02. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BV CBO Collector-base breakdown voltage IC =50uA 50 − V BV CEO Collector-emitter breakdown voltage IC =1.0mA 50 − − V VBV EBO Emitter-base breakdown voltage IE=50uA 5.0 −− ICBO Collector cutoff current VCB =50V − − 0.5 uA IEBO Emitter cutoff current hFE DC current gain VEB =4V VCE(sat) Collector-emitter saturation voltage IC /IB=5mA/0.5mA − 0.5 − 0.3 600100 R 1 Input resistor 32.9 61.1 250 47 KΩ uA fT Transition frequency IC =5mA, VCE =10.0V f=100MHz − −250 MHz IC =1mA; VCE =5.0V
RATING CHARACTERISTIC CURVES ( CHIMD8PT) CHDTA144T Typical Electrical Characteristics -10u -50u -100u -100u -500u -1m -5m -10m −1m -5m -500m -10m -200m -50m -100m -100m -50m -20m 500 -10m 200 -5m 100 -2m -1m COLLECTOR CURRENT : I C (A) DC CURRENT GAIN : hFE Fig.1 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : V CE(sat) (V) Fig.2 Collector-emitter saturation voltage vs. collector current COLLECTOR CURRENT : I C (A) VCE -5V= Ta=100C 25C -40C O O O lC /lB 10= 100C 25C -40C O O O
RATING CHARACTERISTIC CURVES ( CHIMD8PT) CHDTC144T Typical Electrical Characteristics 100 200 C O LLEC TO R C U R R EN T : I C (A) 500 D C C U R R EN T G AIN : hFE 1m100 2m 5m200 10m 20m500 50m 100m1m 500m 200m 10m 100m 20m 50m 50m 20m 100m 10m 500 200 100 l O I =VC E 5V Ta= 100C 25C -40C Fig.1 D C current gain vs. collector current C O LLEC TO R C U R R EN T : IC (uA) C O LLEC saturationTO R VO LTAG E : VC E(sat) (V) Fig.2 Collector-emitter voltage vs. collector current O O O Ta=100C 25C -40C O O O