CHEMT1PT CHENMKO | Alldatasheet
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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Silicon Transistor VOLTAGE 50 Volts CURRENT 150 mAmpere APPLICATION FEATURE * Two the 2SA1037K in one package. CIRCUIT * Small Signal Amplifier . * Low cob. Cob=4.0pF(Typ.) * High saturation current capability. * PC= 150mW (Total),120mW per element must not be exceeded. * Low saturation voltage V CE(sat) =-0.5V(max.)(I C=50mA) 1 3 6 4 2SA1037K LIMITING VALUES Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. MAXIMUM RATINGES ( At T A = 25 C unless otherwise noted ) RATINGS CONDITION Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Open Emitter Open Base Open Collector Collector Current DC Peak Collector Current Peak Base Current Total Power Dissipation TA ≤ 25OC; Note 1 Storage Temperature Junction Temperature Operating Ambient Temperature SYMBOL VCBO VCEO VEBO IBM TAMB TJ TSTG ICM IC MIN. MAX. UNITS - -60 Volts Volts Volts mAmps mAmps mAmps mW oC oC oC - -50 - -6 - -150 - -150 - -15 - 150 -55 +150 - +150 -55 +150 PTOT * PNP Silicon Transistor 2004-07 * Small surface mounting type. (SOT-563 ) SOT-563 (5) 1.5~1.7 0.5~0.6 0.09~0.18 SOT-563Dimensions in millimeters 0.50 0.50 0.9~1.1 1.5~1.7 0.15~0.3 1.1~1.3 (4) (1) (3)
ELECTRICAL CHARACTERISTICS ( At T A = 25oC unless otherwise noted ) PARAMETERS CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain IE=0; VCB=-60V IC=0; VEB=-6V VCE=-6V IC=-1mA Collector-Emitter Saturation Voltage IC=-50mA; IB=-5mA IE=ie=0; VCB=-12V; f=1MHz IE=2mA; VCE=-12V; f=100MHz Output Collector Capacitance Transition Frequency SYMBOL ICBO IEBO hFE Cob fT VCEsat MIN. MAX.TYPE UNITS - -0.1 uA Volts pF MHz - -0.1- 120 560- - -0.5- - 5.04 - -140 Collector-base breakdown voltage IC=-50uA BVCBO - Volts Volts Volts Collector-emitter breakdown voltage IC=-1mA Emitter-base breakdown voltage BVCEO IE=-50uA BVEBO -50 -60 RATING CHARACTERISTIC CURVES ( CHEMT1PT ) uA
RATING CHARACTERISTIC CURVES ( CHEMT1PT ) 2SA1037K Typical Electrical Characteristics Fig.1 Grounded emitter propagation characteristics COLLECTOR CURRENT : I C (mA) BASE TO EMITTER VOLTAGE : VBE (V) Fig.2 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current (1) DC CURRENT GAIN : hFE COLLECTOR CURRENT : I C (mA) Fig.4 DC current gain vs. collector current (2) DC CURRENT GAIN : hFE COLLECTOR CURRENT : I C (mA) Fig. 5 Collector-emitter saturation voltage vs. collector current COLLECTOR SATURATION VOLTAGE : V CE(sat) (V) COLLECTOR CURRENT : I C (mA) Fig.6 Collector-emitter saturation voltage vs. collector current COLLECTOR SATURATION VOLTAGE : V CE(sat) (V) COLLECTOR CURRENT : I C (mA) Fig.7 Gain bandwidth product vs. emitter current EMITTER CURRENT : IE (mA) TRANSITION FREQUENCY : fT (MHz) −0.2 −50 −20 −10 −0.5 −0.2 VCE =−6VTa=100˚C 25˚C −40˚C −0.4 −1.20 −10 −0.8 −1.6 −2.0 −3.5µA −7.0 −10.5 −14.0 −17.5 −21.0 −24.5 −28.0 −31.5 IB=0 Ta=25˚C −35.0 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : I C (mA) 500 200 100 Ta=25˚C VCE =−5V −3V −1V 500 200 100 VCE =−6VTa=100˚C −40˚C 25˚C −0.1 −0.5 −0.2 −0.05 Ta=25˚C IC /IB=50 −0.1 −0.5 −0.2 −0.05 lC /lB=10 Ta=100˚C 25˚C −40˚C 50 1000.5 20 100 200 500 1000 12 5 1 0 Ta=25˚C VCE =−12V