CHEMF7PT

CHEMF7PT CHENMKO | Alldatasheet

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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Power Management (Dual Transistor) APPLICATION FEATURE * Power switching circuit in a single package. * Power management circuit * Mounting cost and area can be cut in half. * Both the 2SC5585 & CHDTC123E in one package. * Built in bias resistor(R1=2.2kΩ, Typ. ) CIRCUIT 2SC5585 LIMITING VALUES In accordance w ith the Absolute M axim um R ating System (IEC 60134). Note SYM B O L PA R A M ETER C O N D ITIO N S M IN . M A X. U N IT VCBO Collector-base voltage − 15 V VCEO 12 V IC − 500 DC Output current mA P C Total power dissipation − 150 mW TSTG Storage temperature −55 +150 O C TJ Junction temperature − 150 O C VEBO Collector-emitter voltage Emitter-base voltage − 6 V NOTE.2 1. Single pulse Pw=1ms Icp 1000 − NOTE.1 2. 120mW per element must not be exceeded. Each terminal mounted on a recommended land. 1 3 6 4 R2R1 Tr1:VOLTAGE 12 Volts CURRENT 0.5 Ampere DTr2:VOLTAGE 50 Volts CURRENT 100 mAmpere Tr1 DTr2 2004-07 * Small surface mounting type. (SOT-563) SOT-563 MARKING * F7 (5) 1.5~1.7 0.5~0.6 0.09~0.18 SOT-563Dimensions in millimeters 0.50 0.50 0.9~1.1 1.5~1.7 0.15~0.3 1.1~1.3 (4) (1) (3)

In accordance with the Absolute Maximum Rating System (IEC60134). Note 1. Characteristics of built-in transistor. 2SC5585 CHARA CTERISTICS Tamb =2 5 °C unless otherwise speciÞed. CHDTC123E CHARA CTERISTICS Note Pulse test: tp≤300uS; δ≤0.02. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC Supply voltage − 50 V VIN Input voltage -10 +20 V IO − 100 IC(Max.) DC Output current − 100 mA PC − 150 mW TSTG Storage temperature −55 +150 O C TJ Junction temperature − 150 O C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BVEBO Collector-emitter breakdown voltage −12 V Collector-base breakdown voltage 15 − − V VEmitter-base breakdown voltage Collector cut-off current − − 100 nAEmitter cut-off current Collector-emitter saturation voltage hFE DC current gain − 100 270 90 mV Collector output capacitance 7.5 fT Transition frequency − −320 MHz SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VIoff) Input off voltage IO =100uA; VCC =5.0V 0.5 V VI(on) Input on voltage IO =20mA; VO =0.3V 3.0 V VVO(on) Output voltage IO =10mA; II=0.5mA − 0.30.1 II Input current VI=5V − − 3.8 mA IC(off) Output current R 1 Input resistor VI=0V; VCC =50V G1 DC current gain IO =20mA; VO =5.0V − 0.5 20 − KΩ R 2/R1 Resistor ratio 0.8 1.2 2.2 1.0 uA fT Transition frequency IE=-5mA, VCE =10.0V f=100MHz= − −250 MHz Tamb =2 5 °C unless otherwise speciÞed. NOTE.1 Power dissipation NOTE.2 2. Each terminal mounter on a recommended land. BVCBO BVCEO ICBO IEBO Cob VCE(sat) nA 680 − − pF VCE=2V,IE=-10mA,f=100MHZ VCB=10V,IE=0mA,f=1MHZ IC=200mA,IB=10mA VCE=2V,IC=10mA VCB=15V VEB=6V IE=10uA IC=10uA IC=1mA Note 1.Pulse test: tp≤300uS; δ≤0.02. 250

RATING CHARACTERISTIC CURVES ( CHEMF7PT ) 2SC5585 Typical Electrical CharacteristicsCOLLECTOR CURRENT : IC(mA) BASE TO EMITTER VOLTAGE : VBE(V) 1000 COLLECTOR CURRENT : IC(mA) DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)COLLECTOR CURRENT : I C (mA) Fig.3 C ollector-emitter saturation voltage vs. collector current ( I ) Fig.1 Ground emitter propagation characteristics Fig.2 DC current gain vs. collector current Fig.4 Collector-emitter saturation voltage vs. collector current ( II ) COLLECTOR CURRENT : I C (mA) COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) 100 1000 100 1000100101 1000100101 1000 100 1000 100 1000100101 VCE=2V pulsed pulsed O Ta=25 C Ta=125 C O Ta=25 C Ta=-40 C O O VCE=2V pulsed pulsed VCE=2VTa=125 C O O 25 C O -40 C O O Ta=-40 C Ta=25 C Ta=125 C O pulsed Ta=125 C O Ta=25 C O Ta=-40 C O IC/IB=20

RATING CHARACTERISTIC CURVES ( CHEMF7PT ) BASER SATURATION VOLTAGE : VBE(sat)(mV) COLLECTOR CURRENT : IC(mA) Fig.5 Base-emitter saturation voltage vs. collector current EMITTER CURRENT : IE(mA) TRANSITION FREQUENCY : fT(MHZ) Fig.6 Gain bandwidth product vs. collector current Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage COLLECTOR TO BASE VOLTAGE : VCB(V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 1000100101 1000 100 1000 100 1000100101 1000100101 1000 100 2SC5585 Typical Electrical Characteristics pulsed IC/IB=20 Ta=25 C O Ta=125 C Ta=-40 C O O pulsed Ta=25 C O VCE=2V O Ta=25 C Cib Cob IE=0A f=1MHZ

RATING CHARACTERISTIC CURVES ( CHEMF7PT ) CHDTC123E Typical Electrical Characteristics Fig.3 D C current gain vs. output current Fig.4 O utput voltage vs. output current Fig.1 Input voltage vs. output current (O N characteristics) Fig.2 O utput current vs. input voltage (O FF characteristics) 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 100 500m 200m 100m VO=0.3V Ta=−40°C 25°C 100°C IN PU T VO LTAG E : VI(on) (V) OUTPUT CURRENT : IO (A) 0 3.0 10m 200µ 500µ 100µ 20µ 50µ 10µ VCC=5V Ta=100°C 25°C −40°C INPUT VOLTAGE : VI(off) (V) O U TPU T C U R R EN T : Io (A) VO=5V 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 500 200 100 Ta=100°C 25°C −40°C D C C U R R EN T G AIN : G OUTPUT CURRENT : IO (A) 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 500m 200m 100m 50m 20m 10m lO/lI=20 Ta=100°C 25°C −40°C OUTPUT CURRENT : IO (A) OUTPUT VOLTAGE : V O(on) (V)