CHDTC623TUPT CHENMKO | Alldatasheet
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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 20 Volts CURRENT 6 00 mAmpere APPLICATION FEATURE * Small surface mounting type. (SC-70/SOT-323) * In addition to the features of regular digital transistor. VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transistors CONSTRUCTION * One N PN transistors and bias of thin-film resistors in one package. * Switching circuit, Inverter, Interface circuit, Driver circuit. 2005-09 ideal for muting circuits. * These transistors can be used at high current levels,IC=600mA * Internal isolated NPN transistors in one package. * Built in single resistor(R1=2.2kΩ, Typ. ) CIRCUIT LIM ITIN G VA LU ES In accordance w ith the Absolute M axim um R ating System (IEC 60134). N ote 1. Transistor m ounted on an FR 4 printed-circuit board. 2 1 Emitter Base Collector TR R 1 SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-Base voltage 20 V 20 V IC(Max.) Collector current 600 mA PD Power dissipation Tamb ≤ 25 O C, Note 1 200 mW TSTG Storage temperature −55 ∼ +150 O C TJ Junction temperature O C VCEO Collector-Emitter voltage VEBO Emitter-Base voltage −55 ∼ +150 V SC-70/SOT-323 MARKING Dimensions in millimeters SC-70/SOT-323 (1) (2) (3) 0.65 0.65 1.3±0.1 2.0±0.2 0.8~1.1 0.3±0.1 0.05~0.2 0~0.1 1.25±0.1 2.0~2.45 0.1Min.
Tam b = 25 °C unless otherw ise speciÞed. Note 1.Pulse test: tp≤300uS; δ≤0.02. SYM B O L PA R A M ETER C O N D ITIO N S M IN . TYP. M A X. U N IT BVC BO C ollector-base breakdow n voltage IC =50uA 20 − V BVC EO C ollector-em itter breakdow n voltage IC =1.0m A 20 − − V VBVEBO Em itter-base breakdow n voltage IE=50uA 12 −− IC BO C ollector cutoff current VC B=20V − − 0.5 uA IEBO Em itter cutoff current hFE D C current gain VEB=12V VC E(sat) C ollector-em itter saturation voltage IC /IB=50mA/2 .5mA − 0.5 − 150 2700820 R 1 Input resistor KΩ uA fT Transition frequency IE=-50mA, VCE =10.0V f=100M H z − −150 M H z RATING CHARACTERISTIC ( CHDTC623TUPT ) IC =50mA; VCE =5.0V mV40 2.2 2.861.54 RON Output "ON" resistance −− 0.4 ΩVI=5V,RL=1KΩ ,f=1KHZ
RATING CHARACTERISTIC CURVES ( CHDTC623TUPT ) Typical Electrical Characteristics 100 1000 10000 0.1 1 10 100 1000 COLLECTOR CURRENT : I C (mA) DC CURRENT GAIN : h FE VCE =5V Fig.1 DC Current Gain vs. Collector Current Ta=100°C Ta=25°C Ta= −40°C 100 1000 10000 0.1 1 10 100 1000 COLLECTOR CURRENT : I C (mA) IC / IB=20 Fig.2 Collector-Emitter Saturation Voltage vs. Collector Current COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) Ta=100°C Ta=25°C Ta= −40°C 0.1 100 1000 0.1 1 10 100 INPUT VOLTAGE : VI (V) ON RESISTANCE : Ron (Ω) Fig.3 "ON" resistance vs. Input Voltage Ta=25°C f=1kHz RL=1kΩ hFE=1500 (5V / 50mA)