CHDTC144TEPT CHENMKO | Alldatasheet
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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION FEATURE * Small surface mounting type. (SC-75/SOT-416) * High current gain. * Suitable for high packing density. CONSTRUCTION * One N PN transistors and bias of thin-film resistors in one package. * Switching circuit, Inverter, Interface circuit, Driver circuit. 2003-06 * Low colloector-emitter saturation. * High saturation current capability. * Internal isolated NPN transistors in one package. * Built in single resistor(R1=47kΩ, Typ. ) CIRCUIT LIM ITIN G VA LU ES In accordance w ith the Absolute M axim um R ating System (IEC 60134). N ote 1. Transistor m ounted on an FR 4 printed-circuit board. 2 1 Emitter Base Collector TR R 1 SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-Base voltage 50 V 50 V junction - soldering point IC(Max.) Collector current 100 mA PD Pow er dissipation Tam b ≤ 25 O C, Note 1 150 mW TSTG Storage temperature −55 ∼ +150 O C TJ R θJ-S Thermal resistance Junction temperature O C 140 O C/W VCEO Collector-Emitter voltage VEBO Emitter-Base voltage −55 ∼ +150 V , Note 1 SC-75/SOT-416 MARKING TED Dimensions in millimeters SC-75/SOT-416 (1) (2) (3) 0.5 0.6~0.9 0.3± 0.15±0.05 0.8±0.1 1.6±0.2 0.1Min. 0.2±0.10.05 0~0.1
Tam b = 25 °C unless otherw ise speciÞed. N ote 1.Pulse test: tp≤300uS; δ≤0.02. SYM B O L PA R A M ETER C O N D ITIO N S M IN . TYP. M A X. U N IT BVC BO C ollector-base breakdow n voltage IC =50uA 50 − V BVC EO C ollector-em itter breakdow n voltage IC =1.0m A 50 − − V VBVEBO Em itter-base breakdow n voltage IE=50uA 5.0 −− IC BO C ollector cutoff current VC B=50V − − 0.5 uA IEBO Em itter cutoff current hFE D C current gain VEB=4V VC E(sat) C ollector-em itter saturation voltage IC /IB=5mA/0.5mA − 0.5 − 0.3 600100 R 1 Input resistor 32.9 61.1 250 47 KΩ uA fT Transition frequency IC =5m A, VC E=10.0V f=100M H z − −250 M H z RATING CHARACTERISTIC ( CHDTC144TEPT ) IC =1m A; VC E=5.0V V
RATING CHARACTERISTIC CURVES ( CHDTC144TEPT ) Typical Electrical Characteristics C O LLEC TO R C U R R EN T : IC (A) D C C U R R EN T G AIN : hFE 100 200 5001m 2m 5m 10m 20m 50m 100m 500 200 100 VC E 5V Ta= 100C 25C -40C Fig.1 D C current gain vs. collector current C O LLEC TO R C U R R EN T : IC (uA) C O LLEC saturationTO R VO LTAG E : VC E(sat) (V) Fig.2 Collector-emitter voltage vs. collector current O O O 100 200 500 1m 2m 5m 10m 20m 50m 100m 500m 200m 100m 50m 20m 10m lO /lI 10= Ta=100C 25C -40C O O O