CHDTA144GKPT CHENMKO | Alldatasheet
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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 V olts CURRENT 100 mAmpere APPLICATION FEATURE * Small surface mounting type. (SC-59/SOT-346) * High current gain. * Suitable for high packing density. CONSTRUCTION * One PNP transistors and bias of thin-film resistors in one package. * Switching circuit, Inverter, Interface circuit, Driver circuit. 2003-12 * Low colloector-emitter saturation. * High saturation current capability. * Internal isolated PNP transistors in one package. * Built in bias resistor(R1=47kΩ, Typ. ) CIRCUIT LIMITING VALUES In accordance with the Absolute Maximum Rating System. Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-Base voltage -50 V -50 V junction - soldering point IC Collector current -100 mA PC Collector Power dissipation Tamb ≤ 25 O C, Note 1 200 mW TSTG Storage temperature 150 O C TJ R θJ-S Thermal resistance Junction temperature O C 140 O C/W VCEO Collector-Emitter voltage VEBO Emitter-Base voltage −55 ∼ +150 V , Note 1 2 1 Emitter Base Collector TR SC-59/SOT-346 MARKING GK3 (1) (2) (3) Dimensions in millimeters 0.95 0.95 1.7~2.1 2.7~3.1 0.89~1.3 0.3~0.51 0.085~0.2 0~0.1 1.2~1.9 2.1~2.95 0.3~0.6 SC-59/SOT-346
Tamb =2 5 °C unless otherwise speciÞed. Note 1.Pulse test: tp≤300uS; δ ≤0.02. SYMBOL PAR AMETER CONDITIONS MIN. TYP. MAX. UNIT BV CBO Collector-Base breakdown voltage IC = -50uA -50.0 IC = -1mA − − V V IE= -160uA ICBO Collector-Base current VCB = -50V IEBO Emitter-Base current R 1 Input resistor VEB = -4V hFE DC current gain IC = -5mA; VCE = -5.0V − -130 61.132.9 KΩ uA fT Transition frequency IE=5mA, VCE = -10.0V f=100MHz= − −250 MHz RATING CHARACTERISTIC ( CHDTA144GKPT ) VVCE(sat) Collector-Emitter Saturation voltage IC = -10mA; IB= -0.5mA BV CEO Collector-Emitter breakdown voltage BV EBO Emitter-Base breakdown voltage -50.0 -5.0 − − − − -0.3 − -0.5− uA V − −