CHDTA113TKPT CHENMKO | Alldatasheet
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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 V olts CURRENT 100 mAmpere APPLICATION FEATURE * Small surface mounting type. (SOT-23) * High current gain. * Suitable for high packing density. CONSTRUCTION * One PNP transistors and bias of thin-film resistors in one package. * Switching circuit, Inverter, Interface circuit, Driver circuit. 2003-12 * Low colloector-emitter saturation. * High saturation current capability. * Internal isolated PNP transistors in one package. * Built in bias resistor(R1=1.0k Ω, Typ. ) CIRCUIT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC60134). Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-Base voltage -50 V -50 V junction - soldering point IC(Max.) Collector current -100 mA PD Pow er dissipation Tam b ≤ 25 O C, Note 1 200 m W TSTG Storage temperature −55 ∼ +150 O C TJ R θJ-S Thermal resistance Junction temperature O C 140 O C/W VCEO Collector-Emitter voltage VEBO Emitter-Base voltage −55 ∼ +150 V , Note 1 2 1 E B C TR SOT-23 MARKING * R1 Dimensions in inches and (millimeters) SOT-23 .119 (3.04) .007 (0.177) .002 (0.05) .110 (2.80) .103 (2.64) .028 (0.70) .020 (0.50) .055 (1.40) .047 (1.20) .045 (1.15) .033 (0.85) .086 (2.20) .082 (2.10) .041 (1.05) .019 (0.50) .018 (0.30) .033 (0.85) .066 (1.70) (1) (2) (3)
Tamb =2 5 °C unless otherwise speciÞed. Note 1.Pulse test: tp≤300uS; δ ≤0.02. SYMBOL PAR AMETER CONDITIONS MIN. TYP. MAX. UNIT BV CBO Collector-Base breakdown voltage IC = -50uA -50.0 IC = -1mA − − V V IE= -50uA ICBO Collector-Base current VCB = -50V IEBO Emitter-Base current R 1 Input resistor VEB = -4V hFE DC current gain IC = -1mA; VCE = -5.0V − -0.5 100 1.30.7 KΩ 1.0 uA fT Transition frequency IE=5mA, V f=100MHz= − −250 MHz RATING CHARACTERISTIC ( CHDTA113TKPT ) VVCE(sat) Collector-Emitter Saturation voltage BV CEO Collector-Emitter breakdown voltage BV EBO Emitter-Base breakdown voltage -50.0 -5.0 − − − − -0.3 − -0.5− uA 250 600 V IC = -5mA; IB= -0.25mA CB = -10.0V
RATING CHARACTERISTIC CURVES ( CHDTA113TKPT ) Typical Electrical Characteristics -100 -500 −1m -5m -10m -50m -100m 500 200 100 VCE -5V Ta= 100C 25C -40C O O O -100u -500u -1m -5m -10m -50m -100m -500m -200m -100m -50m -20m -10m -5m -2m -1m lC /lB 10= 100C 25C -40C O O O COLLECTOR CURRENT : I C (A) DC CURRENT GAIN : hFE Fig.1 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : V CE(sat) (V) Fig.2 Collector-emitter saturation voltage vs. collector current COLLECTOR CURRENT : I C (A)