CHBTA13PT CHENMKO | Alldatasheet

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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Darlington Transistor VOLTAGE 30 Volts CURRENT 1.2 Ampere APPLICATION FEATURE * Small surface mounting type. (SOT-23) * High current (Max.=1200mA). * Suitable for high packing density. CONSTRUCTION * NPN Darlington Transistor * High current gain applications. 2003-5 * Low voltage (Max.=30V) . * High saturation current and current gain capability. CIRCUIT E C B N ote SOT-23 LIM ITIN G VA LU ES In accordance w ith the Absolute M axim um R ating System (IEC 60134). SYM B O L PA R A M ETER C O N D ITIO N S M IN . M A X. U N IT VC BO collector-base voltage open em itter − 30 V VC EO collector-em itter voltage open base − 30 V VVEBO em itter-base voltage open collector − 10 IC collector currentD C − 1200 m A IC M peak collector current − 1500 m A IBM peak base current − 0.5 m A Ptot total pow er dissipation derate above 25 O C Tam b ≤ 25 °C ; note 1 − 350 2.8 m W m W / O C Tstg storage tem perature −55 +150 °C Tj junction tem perature − +150 °C Tam b operating am bient tem perature −55 +150 °C MARKING * NI (2) (1) (3) .119 (3.04) .007 (0.177) .002 (0.05) .110 (2.80) .103 (2.64) .028 (0.70) .020 (0.50) .055 (1.40) .047 (1.20) .045 (1.15) .033 (0.85) .086 (2.20) .082 (2.10) .041 (1.05) .019 (0.50) .018 (0.30) .033 (0.85) .066 (1.70) (1) (2) (3) Dimensions in inches and (millimeters) SOT-23

RATING CHARACTERISTIC CURVES ( CHBTA13PT ) TH ER M A L C H A R AC TER ISTIC S N ote C H A R AC TER ISTIC S Tam b = 25 °C unless otherw ise speciÞed. N ote 1. Pulse test: tp ≤ 300 µs;δ ≤ 0.02. SYM B O L PA R A M ETER C O N D ITIO N S VA LU E U N IT R th j-a therm al resistance from junction to am bient note 1 357 K/W SYM B O L PA R A M ETER C O N D ITIO N S M IN . M A X. U N IT IC BO collector cut-off current IE = 0; VC B = 30 V − 0.1 uA IEBO em itter cut-off current IC = 0; VC E = 10 V − 0.1 uA hFE D C current gain VC E = 5.0 V; note 1 IC = 10 m A 5000 − IC = 100 m A 10000 − VC Esat collector-em itter saturation voltage IC = 100 m A; IB =0.1m A − 1.50 V VBEsat base-em itter saturation voltage IC = 100 m A; VC E = 5.0 V 2.0 V C cb collector-base capacitance IE = ie = 0; VC B =10V ; f= 1 M H z − 10 pF fT transition frequency IC = 10 m A; VC E =10 V ; f= 100 M H z 125 − M H z