CH837SPT CHENMKO | Alldatasheet

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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Muti-Chip General Purpose Amplifier VOLTAGE 45 Volts CURRENT 0.2 Ampere APPLICATION FEATURE * Small surface mounting type. (SC-74/SOT-457) * High current gain. * Suitable for high packing density. CONSTRUCTION * Two NPN transistors in one package. * AF input stages and driver applicationon equipment. * Other general purpose applications. 2002-12 * Low colloector-emitter saturation. * High saturation current capability. * Two internal isolated NPN transistors in one package. CIRCUIT LIM ITIN G VA LU ES In accordance w ith the Absolute M axim um R ating System (IEC 60134). N ote 1. Transistor m ounted on an FR 4 printed-circuit board. SYM B O L PA R A M ETER C O N D ITIO N S M IN . M A X. U N IT VC BO collector-base voltage open em itter open em itter − 50 V VC EO collector-em itter voltage open base − 45 V VC ES collector-base voltage − 50 V VVEBO em itter-base voltage open collector − 6 IC collector current(D C ) − 200 m A IC M peak collector current − 400 m A IBM peak base current − 2 m A Ptot total pow er dissipation Tam b ≤ 25 °C ; note 1 − 300 m W Tstg storage tem perature −55 +150 °C Tj junction tem perature − 150 °C Tam b operating am bient tem perature −55 +150 °C 6 5 4 321 C 1 B2 E2 C 2B1E1 TR 1 TR 2 SC-74/SOT-457 Dimensions in millimeters SC-74/SOT-457 0.935~1.30.08~0.2 0~0.15 2.6~3.0 0.3~0.6 0.95 0.95 1.7~2.1 2.7~3.1 0.25~0.5 1.4~1.8 (1) (6) (4)(3)

TH ER M A L C H A R AC TER ISTIC S N ote 1. Transistor m ounted on an FR 4 printed-circuit board. C H A R AC TER ISTIC S Tam b = 25 °C unless otherw ise speciÞed. N ote 1. Pulse test: tp ≤ 300 µs;δ ≤ 0.02. SYM B O L PA R A M ETER C O N D ITIO N S VA LU E U N IT R th j-s therm al resistance from junction to am bient note 1 415 K/W SYM B O L PA R A M ETER C O N D ITIO N S M IN . M A X. U N IT IC BO collector cut-off current IE = 0; VC B = 30 V − 15 nA IEBO IC = 0; VC B = 30 V; TA = 150 O C − 30 uA em itter cut-off current IC = 0; VEB = 4 V − 15 nA hFE D C current gain IC = 2.0 m A; VC E = 5.0V; note 1 110 630 VC Esat collector-em itter saturation voltage IC = 10 m A ; IB = 0.5 m A IC = 10 m A ; IB = 0.5 m A − 650 250 m V m V VBEsat base-em itter saturation voltage IC = 2.0 m A;VC E = 5.0 V 0.58 0.70 IC = 10 m A;VC E = 5.0 V − 0.77 V V C c collector capacitance IE = ie = 0; VC B = 10V ; f= 1 M H z − 2.0 pF fT transition frequency IC = 50 m A; VC E = 5 V ; f= 100 M H z 200 − M H z RATING CHARACTERISTIC ( CH837SPT ) RATING CHARACTERISTIC CURVES ( CH837SPT ) C ollector-Em itter S aturation Voltage vs C ollector C urrent 0.1 1 10 100 0.05 0.1 0.15 0.2 0.25 0.3 I - C O LLECTO R C U RR EN T (m A) V - C O LLE CTO R -EM ITTER VO LTAG E (V) C CESAT 25 °C - 40 °C 125 °C B= 10 Typical Pulsed C urrent G ain vs C ollector C urrent 0.01 0.0.03 0.1 03 1 3 10 30 100 200 400 600 800 1000 1200 I - CO LLE C TO R C U RR ENT (m A) h - TYPIC A L PU LSED C U RR ENT G AIN C FE 125 °C 25 °C - 40 °C V = 5.0 VC E

RATING CHARACTERISTIC CURVES ( CH837S ) Input and O utput C apacitance vs R everse B ias Voltage 0 4 8 12 16 20 R EVER SE BIAS VO LTAG E (V) C APAC ITA NC E (pF) f = 1.0 M H z C ob C te C ontours of C onstant G ain B andw idth Product (f ) 0.1 1 10 100 I - C O LLEC TO R C U RR EN T (m A ) V - C O LLECTO R VO LTAG E (V) C

175 M H z

T CE

150 M H z

125 M H z

75 M H z

100 M H z

Voltage vs C ollector C urrent 0.1 1 10 100 0.2 0.4 0.6 0.8 I - C O LLECTO R C U RR EN T (m A) V - C O LLEC TO R -EM ITTER VO LTAG E (V) C BESAT B= 10 25 °C - 40 °C 125 °C B ase-Em itter O N Voltage vs C ollector C urrent 0.1 1 10 40 0.2 0.4 0.6 0.8 I - C O LLECTO R C U RR EN T (m A ) V - BA SE-EM ITTER O N VO LTAG E (V) C BEO N V = 5.0 VC E 25 °C - 40 °C 125 °C C ollector-C utoff Current vs A m bient Tem perature 25 50 75 100 125 150 0.1 T - AM BIEN T TEM PER ATUR E ( C ) I - C O LLEC TO R CURR EN T (nA) A CBO V = 45V CB N orm alized C ollector-C utoff C urrent vs A m bient Tem perature 25 50 75 100 125 150 100 1000 T - A M B IE NT TEM P ER ATUR E ( C) C H AR AC TER ISTIC S vs vALU E AT TA=25 O C A °

RATING CHARACTERISTIC CURVES ( CH837SPT ) Pow er D issipation vs A m bient Tem perature 0 25 50 75 100 125 150 100 200 300 400 500 TEM PERATU RE ( C) P - PO W ER D ISSIPATIO N (m W ) º D W ideband N oise Frequency vs S ource R esistance 1,000 2,000 5,000 10,000 20,000 50,000 100,000 R - SO UR CE RESISTA N CE ( O hm s ) N F - NO ISE FIG U RE (dB) V = 5.0 V BA N DW IDTH = 15.7 kH z C E I = 10 uAC I = 100 uAC S I = 30 uAC N oise Figure vs F requency 0.0001 0.001 0.01 0.1 1 10 100 f - FR EQ U ENC Y (M Hz) N F - NO ISE FIG U RE (dB) V = 5.0VC E I = 200 uA, R = 10 k C S I = 1.0 m A, R = 500 C S I = 100 uA, R = 10 k C S I = 1.0 m A, R = 5.0 k C S