CH451N1PT

CH451N1PT CHENMKO | Alldatasheet

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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 30 Volts CURRENT 0.5 Ampere ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) NOTES : 2006-07 Maximum Average Reverse Current at VR= 5.0V CHARACTERISTICS SYMBOL UNITS 0.55 uAmps uAmps Volts Maximum Instantaneous Forward Voltage MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current at 8.3 mSec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) Storage Temperature Range Maximum Operating Temperature Range SYMBOL VRRM VRMS VDC IO CJ TJ VF(2) 0.385 Volts@ IF(1)= 100mA @ IF(2)= 500mA VF(1) IR(2) IR(1) TSTG IFSM CH451N1PT UNITS Volts Volts Volts Amps 0.5 2.0 +125 -40 to +125 Amps pF oC oC @ TA= 25OC @ TA= 45OC 1. Measured at 1.0 MHZ and applied reverse voltage of 10.0 volts. 2. ESD sensitive product handling required. APPLICATION * Low power rectification FEATURE * Small surface mounting type. (FBPT-923 ) * Ultra low IR. (VF=0.55V Typ. at 0.5A) * High reliability CONSTRUCTION * Silicon epitaxial planar CH451N1PT (2) (1) (3) 1.0±0.05 0.5±0.05 0.05±0.04 0.68±0.05 0.26±0.05 0.42±0.05 0.3±0.05 0.25(REF.) 0.37(REF.) CIRCUIT Dimensions in millimeters 1.0±0.05 FBPT-923 FBPT-923

RATING CHARACTERISTIC CURVES ( CH451N1PT ) 0.0 100u 10m 100m 10A 100n 10u 100u 10m 100m 4010 20 30 100 10 20 30 40 1000 FORWARD CURRENT, (A) FORWARD VOLTAGE, (V) FIG. 1 - FORWARD CHARACTERISTICS -25oC REVERSE CURRENT, (A) REVERSE VOLTAGE, (V) FIG. 2 - MAXIMUM REVERSE CHARACTERISTICS 75oC 45oC 25oC -25oC REVERSE VOLTAGE, (V) JUCTION CAPACITANCE (pF) FIG. 3 - TYPICAL JUNCTION CAPACITANCE Ta=125oC 75oC 25oC