CH4033ZPT CHENMKO | Alldatasheet

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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP SILICON Transistor VOLTAGE 80 Volts CURRENT 1 Ampere APPLICATION FEATURE * Suitable for high packing density. CONSTRUCTION * PNP SILICON Transistor * Telephony and proferssional communction equipment. * Other switching applications. 2004-7 * High saturation current capability. * Voltage controlled small signal switch. CIRCUIT LIM ITIN G VA LU ES In accordance w ith the Absolute M axim um R ating System (IEC 60134). N ote 1. Transistor m ounted on an FR 4 printed-circuit board. SYM B O L PA R A M ETER C O N D ITIO N S M IN . M A X. U N IT VC BO collector-base voltage open em itter − 80 V VC EO collector-em itter voltage open base − 80 V VVEBO em itter-base voltage open collector − 5.0 IC collector current (D C ) − 1000 mA IC M peak collector current − 1500 mA Ptot total pow er dissipation Tamb ≤ 25 °C; note 1 − 2.0 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tam b operating am bient tem perature −65 +150 °C * Small flat package. ( SC-73/SOT-223 ) Dimensions in millimeters SC-73/SOT-223 SC-73/SOT-223 0.90+0.05 6.50+0.20 1.65+0.15 0.01~0.10 3.5+0.2 2.0+0.3 7.0+0.3 0.70+0.10 2.30+0.1 4.60+0.1 0.27+0.05 3.00+0.10 2.0+0.3 0.9+0.2 1 23

1 Base

3 Collector ( Heat Sink )

2 Emitter

  • ZEP

TH ER M A L C H A R AC TER ISTIC S N ote 1. Transistor m ounted on an FR 4 printed-circuit board. C H A R AC TER ISTIC S Tam b = 25 °C unless otherw ise speciÞed. SYM B O L PA R A M ETER C O N D ITIO N S VA LU E U N IT R th j-a therm al resistance from junction to am bient note 1 357 K/W SYM B O L PA R A M ETER C O N D ITIO N S M IN . M A X. U N IT IC BO collector cut-off current IE = 0; VC B = 60 V − 50 nA IEBO emitter cut-off current IC = 0; VEB =5V − 10 nA IC = 100 mA; VCE = 5V IC = 500 mA; VCE =5V 70 100hFE D C current gain I C = -0.1 mA; VCE 75 − IC = 1.0A; VCE = 5V 25 − VC Esat collector-em itter saturation voltage IC = 150 mA; IB = 15 mA − 0.15 V − 0.5 V VBEsat base-emitter saturation voltage IC =150 mA; IB =15 mA 0.9 V C ob collector capacitance IE =ie = 0; VCB =10V ; f=1M H z 20 C em itter capacitance IC = ic = 0; VBE = 500 mV ; f= 1 M H z − 110 pF pF fT transition frequency IC = 50 mA; VCE = 10V ; f = 1.0 MHz 100 − MHz RATING CHARACTERISTIC CURVES ( CH4033ZPT ) = 5V ib IC =-500 mA; IB = 50 mA IC =-500 mA; IB = 50 mA − 1.1 V 300