CFY66 INFINEON | Alldatasheet

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Semiconductor Group 1 of 8 Draft D, September 99 HiRel K-Band GaAs Super Low Noise HEMT

  • HiRel Discrete and Microwave Semiconductor
  • Conventional AlGaAs/GaAs HEMT (For new design we recommend to use our pseudo-morphic HEMT CFY67)
  • For professional super low-noise amplifiers
  • For frequencies from 500 MHz to > 20 GHz
  • Hermetically sealed microwave package
  • Super low noise figure, high associated gain Space Qualified ESA/SCC Detail Spec. No.: 5613/002, Type Variant No.s 01 to 04 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration Package 1234 CFY66-08 (ql) CFY66-08P (ql) CFY66-10 (ql) CFY66-10P (ql) - see below G S D S Micro-X CFY66-nnl: specifies gain and output power levels (see electrical characteristics) (ql) Quality Level: P: Professional Quality, Ordering Code: on request H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Code: on request ES: ESA Space Quality, Ordering Code: on request (see order instructions for ordering example)

Semiconductor Group 2 of 8 Draft D, September 99 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage V DS 3.5 V Drain-gate voltage V DG 4.5 V Gate-source voltage (reverse / forward) V GS - 3... + 0.5 V Drain current I D 60 mA Gate forward current I G 2m A RF Input Power, C- and X-Band 1) PRF,in + 10 dBm Junction temperature T J 150 °C Storage temperature range T stg - 65... + 150 °C Total power dissipation 2) Ptot 200 mW Soldering temperature 3) Tsol 230 °C Thermal Resistance Junction-soldering point R th JS ≤ 515 (tbc.) K/W Notes.: 1) For VDS ≤ 2 V. For VDS > 2 V, derating is required. 2) At TS = + 47 °C. For TS > + 47 °C derating is required. 3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed.

Semiconductor Group 3 of 8 Draft D, September 99 Electrical Characteristics (at TA=25°C; unless otherwise specified) Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source saturation current VDS = 2 V, VGS = 0 V IDss 10 30 60 mA Gate threshold voltage VDS = 2 V, ID = 1 mA -VGth 0.2 0.7 2.0 V Drain current at pinch-off VDS = 1.5 V, VGS = - 3 V IDp -< 5 0 - µ A Gate leakage current at pinch-off VDS = 1.5 V, VGS = - 3 V -IGp - < 50 200 µA Transconductance VDS = 2 V, ID = 10 mA gm10 40 55 - mS Gate leakage current at operation VDS = 2 V, ID = 10 mA -IG10 -< 0 . 5 2 µ A Thermal resistance junction to soldering point Rth JS - 450 - K/W

Semiconductor Group 4 of 8 Draft D, September 99 Electrical Characteristics (continued) Parameter Symbol Values Unit min. typ. max. AC Characteristics Noise figure 1) VDS = 2 V, ID = 10 mA, f = 12 GHz NF dB CFY66-08, -08P - 0.7 0.8 CFY66-10, 10P - 0.9 1.0 Associated gain. 1) VDS = 2 V, ID = 10 mA, f = 12 GHz Ga dB CFY66-08, -08P 10.0 11.0 - CFY66-10, 10P 9.5 10.5 - Output power at 1 dB gain compression 2) VDS = 2 V, ID = 20 mA, f = 12 GHz P1dB dBm CFY66-08P, -10P 10.0 11.0 - Notes.: 1) Noise figure / sssociated gain characteristics given for minimum noise figure matching conditions (fixed generic matching, no fine-tuning). 2) Output power characteristics given for optimum output power matching conditions (fixed generic matching, no fine-tuning).

Semiconductor Group 5 of 8 Draft D, September 99 Typical Common Source S-Parameters CFY66-08: V DS = 2 V, I D = 10 mA, Z o = 50 Ω f |S11| <S11 |S21| <S21 |S12| <S12 |S22| <S22 k-Fact. S 21 /S12 MAG [GHz] [magn] [angle] [magn] [angle] [magn] [angle] [magn] [angle] [magn] [dB] [dB] 1,0 0,990 -21 4,451 161 0,0260 70 0,649 -16 0,14 22,3 2,0 0,960 -39 4,282 144 0,0460 61 0,623 -29 0,19 19,7 3,0 0,920 -57 4,148 126 0,0650 49 0,589 -43 0,27 18,0 4,0 0,880 -77 3,979 108 0,0830 37 0,560 -57 0,32 16,8 5,0 0,830 -95 3,727 93 0,0940 25 0,532 -70 0,39 16,0 6,0 0,790 -111 3,444 78 0,1000 14 0,506 -83 0,47 15,4 7,0 0,749 -124 3,206 64 0,1060 6 0,490 -94 0,55 14,8 8,0 0,720 -137 3,029 50 0,1110 -3 0,463 -103 0,63 14,4 9,0 0,690 -150 2,907 38 0,1130 -11 0,440 -113 0,70 14,1 10,0 0,670 -165 2,845 25 0,1190 -20 0,420 -121 0,74 13,8 11,0 0,649 179 2,787 11 0,1210 -28 0,400 -130 0,79 13,6 12,0 0,628 164 2,699 -3 0,1200 -37 0,385 -143 0,84 13,5 13,0 0,610 151 2,614 -16 0,1200 -46 0,370 -153 0,91 13,4 14,0 0,597 138 2,584 -28 0,1190 -55 0,355 -162 0,96 13,4 15,0 0,584 121 2,550 -42 0,1180 -66 0,340 -172 1,01 13,3 12,8 16,0 0,580 104 2,484 -56 0,1170 -76 0,330 178 1,05 13,3 11,9 17,0 0,580 89 2,461 -71 0,1150 -87 0,325 169 1,08 13,3 11,5 18,0 0,580 74 2,456 -86 0,1160 -100 0,320 160 1,09 13,3 11,4 Typical Common Source Noise-Parameters CFY66-08: V DS = 2 V, I D = 10 mA, Z o = 50 Ω fN F min |Γ opt |< Γ opt Rn [GHz] [dB] [magn] [angle] [Ω ] 1 0,27 0,770 16 17,85 2 0,31 0,720 30 16,55 3 0,35 0,672 43 15,27 4 0,38 0,634 57 13,75 5 0,42 0,604 71 11,99 6 0,46 0,578 85 10,04 7 0,50 0,558 100 8,15 8 0,55 0,541 114 6,30 9 0,60 0,528 128 4,74 10 0,65 0,517 143 3,45 11 0,70 0,506 157 2,58 12 0,74 0,496 171 2,16 13 0,79 0,485 -175 2,27 14 0,85 0,472 -160 2,88 15 0,89 0,457 -146 3,99 16 0,95 0,437 -132 5,59 17 1,00 0,415 -118 7,63 18 1,06 0,389 -102 9,96

Semiconductor Group 6 of 8 Draft D, September 99 Order Instructions: Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level only. Ordering Form: CFY66 -(nnl) (ql) -(nnl) Noise Figure/Gain and/or Power Level (ql): Quality Level Ordering Example: Ordering Code: (on request) CFY66-08P ES For CFY66, Noise Figure/Gain/Power Level 08P: NF < 0.8 dB, G a > 10.0 dB, P1dB > 10 dBm @ 12 GHz in ESA Space Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.infineon.com/products/discrete/hirel.htm - HiRel Discrete and Microwave Semiconductors www.infineon.com/products/discrete/hirel.htm Please contact also our marketing division : Tel.: ++89 234 24480 Fax.: ++89 234 28434 e-mail: martin.wimmers@infineon.com Address: Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich

Semiconductor Group 7 of 8 Draft D, September 99 Micro-X Package Published by Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich. Infineon Technologies AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Infineon Technologies Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Infineon Technologies Office, Semiconductor Group. Infineon Technologies Semiconductors is a certified CECC and QS9000 manufacturer (this includes ISO 9000).